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Silicon germanium (SiGe) alloys hold promise for thermoelectric power generation at high temperatures and have been applied in deep-space missions. However, enhancement of the dimensionless thermoelectric figure-of-merit () is still needed for practical civil applications of SiGe. In this work, we report high-performance oxide/SiGe bulk composites that were obtained via hot-press sintering of mixed powders composed of phosphorus (P)-doped SiGe prepared via mechanical alloying, using a ball-milling technique and La-Nb-doped SrTiO (La-Nb-STO). The La-Nb-STO powder was obtained from ball milling of a bulk La-Nb-STO sample that was sintered via hot pressing of hydrothermally synthesized La-Nb-STO powder. Controlling the amount of La-Nb-STO nanoparticles added to SiGe matrix increased the power factor by optimizing the electron concentration and mobility in the composite. In addition, compared with single-phase P-doped SiGe, the second phase decreased the thermal conductivity because of additional phonon scattering at the interface. As a result, a high of 0.91 was realized in the n-type oxide/SiGe bulk composite at 1000 K, which was 18% larger than that for the typical materials used in space flight missions and 5% higher than the single-phase SiGe alloys obtained in the present study. The strategy used in this study could also be viable to further enhance the of nanostructured n-type SiGe and SrTiO-based oxide materials.
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http://dx.doi.org/10.1021/acsami.9b20090 | DOI Listing |
Nano Lett
August 2025
QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Electron-spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction-band valleys. While sharp quantum-well interfaces are pursued to increase the valley-splitting energy deterministically, here we explore an alternative approach to enhancing the valley splitting on average. We grow increasingly thinner quantum wells with broad interfaces to controllably increase the electron wave function overlap with Ge atoms.
View Article and Find Full Text PDFACS Omega
July 2025
China Institute of Atomic Energy, Beijing 102413, China.
Due to its high operating temperature and excellent mechanical properties, SiGe alloy has become a typical representative of high-temperature thermoelectric materials and has been widely utilized in radioisotope thermoelectric generators (RTGs). However, its relatively high thermal conductivity poses an obstacle to the enhancement of the ZT value, thereby significantly restricting the future development of RTGs. This study involves the fabrication of n-type (SiGe)P(SiC) alloy using high-energy ball milling followed by spark plasma sintering (SPS).
View Article and Find Full Text PDFNanomaterials (Basel)
June 2025
LNESS Laboratory, Institute of Photonic and Nanotechnology (IFN)-CNR, 22100 Como, Italy.
This study provides new insight into the mechanisms governing solid state dewetting (SSD) in SiGe alloys and underscores the potential of this bottom-up technique for fabricating self-organized defect-free nanostructures for CMOS-compatible photonic and nanoimprint applications. In particular, we investigate the SSD of SiGe thin films grown by molecular beam epitaxy on silicon-on-insulator (SOI) substrates, focusing on and clarifying the interplay of dewetting dynamics, strain elastic relaxation, and SiGe/SOI interdiffusion. Samples were annealed at 820 °C, and their morphological and compositional evolution was tracked using atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy, considering different annealing time steps.
View Article and Find Full Text PDFJ Phys Condens Matter
June 2025
Department of Physics, Indian Institute of Science Education and Research, Thiruvananthapuram, Kerala 695551, India.
Shallow undoped Si/SiGe quantum wells are the leading platforms for hosting quantum processors based on single electron spin-qubits. The ohmic contacts to the electron gas in these systems are accomplished by ion-implantation technique since the conventional Au/Sb alloyed contacts present a rough surface consisting of sharp islands and pits. These sharp protrusions cause electrical discharge across the gate-dielectric between the ohmic contacts and the accumulation-gates causing device break-down.
View Article and Find Full Text PDFACS Appl Mater Interfaces
May 2025
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States.
The near-infrared (NIR) emission of silicon-germanium alloy nanocrystals (SiGe NCs) was sensitized by heterostructuring with a quasi two-dimensional (Q-2D) perovskite (CsPbBr blended with butylammonium bromide (BABr)). Colloidal SiGe NCs were synthesized by using a nonthermal plasma method with chloride precursors. As-synthesized SiGe NCs showed no detectable photoluminescence (PL).
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