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The 2D geometry nature and low dielectric constant in transition-metal dichalcogenides lead to easily formed strongly bound excitons and trions. Here, we studied the photoluminescence of van der Waals heterostructures of monolayer MoS and graphene at room temperature and observed two photoluminescence peaks that are associated with trion emission. Further study of different heterostructure configurations confirms that these two peaks are intrinsic to MoS and originate from a bound state and Fermi level, respectively, of which both accept recoiled electrons from trion recombination. We demonstrate that the recoil effect allows us to electrically control the photon energy of trion emission by adjusting the gate voltage. In addition, significant thermal smearing at room temperature results in capture of recoil electrons by bound states, creating photoemission peak at low doping level whose photon energy is less sensitive to gate voltage tuning. This discovery reveals an unexpected role of bound states for photoemission, where binding of recoil electrons becomes important.
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http://dx.doi.org/10.1021/acsnano.7b03457 | DOI Listing |
Nanoscale
September 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.
View Article and Find Full Text PDFNano Lett
September 2025
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea.
Seamless integration of active devices into photonic integrated circuits remains a challenge due to the limited accessibility of the optical field in conventional waveguides, which tightly confine light within their cores. In this study, we propose a two-dimensional (2D) ultrathin waveguide as a photonic platform that enables efficient interaction between guided light and surface-mounted devices by supporting optical modes dominated by evanescent fields. We show that the guided light in a monolayer MoS film propagates over millimeter-scale distances with more than 99.
View Article and Find Full Text PDFJ Am Chem Soc
September 2025
Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States.
Two-dimensional (2D) materials offer a valuable platform for manipulating and studying chemical reactions at the atomic level, owing to the ease of controlling their microscopic structure at the nanometer scale. While extensive research has been conducted on the structure-dependent chemical activity of 2D materials, the influence of structural transformation during the reaction has remained largely unexplored. In this work, we report the layer-dependent chemical reactivity of MoS during a nitridation atomic substitution reaction and attribute it to the rearrangement of Mo atoms.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and growth of insulators on monolayer MoS. Surveying a series of aluminum (AlO) precursors, we observe that increasing the length of the ligands reduces the nucleation delay of alumina on monolayer MoS, a phenomenon that we attribute to improved van der Waals dispersion interactions with the 2D material.
View Article and Find Full Text PDFNanoscale
September 2025
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
With the progress of study, MoS has been proven to show excellent properties in electronics and optoelectronics, which promotes the fabrication of future novel integrated circuits and photodetectors. However, highly uniform wafer-scale growth is still in its early stage, especially regarding how to control the precursor and its distribution. Herein, we propose a new method, spraying the Mo precursor, which is proven to fabricate highly uniform 2-inch monolayer MoS wafers.
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