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A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.
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http://dx.doi.org/10.3390/ma5050889 | DOI Listing |
Sci Rep
August 2025
The Institute of Scientific and Industrial Research, The University of Osaka, 8-1 Mihogaoka, Ibaraki, 567-0047, Osaka, Japan.
The atomic structure of amorphous Si (a-Si) has traditionally been described by the continuous random network (CRN) model, which consists of the four-coordinated Si with a non-periodic structure. However, the paracrystalline model, consisting of strained nanocrystals embedded within a disordered matrix, has gained traction. This shift is largely driven by fluctuation electron microscopy observations, which reveal the distinct diffraction patterns that are inconsistent with the CRN model.
View Article and Find Full Text PDFChem Sci
August 2025
College of Materials Science and Engineering, Hunan University Changsha Hunan 410082 P. R. China.
Surface strain has general impacts on the electronic structure and catalytic properties of catalyst surfaces. However, accurately deciphering the strain effect in many catalytic processes, such as the alkaline hydrogen oxidation reaction (HOR), remains a long-standing challenge due to the difficulty in isolating the strain and ligand effects in most catalytic systems. Here the Ru(111) surfaces are designed and constructed epitaxially growing five atomic layers of Ru onto Pd octahedra and Pd icosahedra, respectively, providing the model surfaces to explore the strain effect.
View Article and Find Full Text PDFWe present the development of a rolled-up GeSn/Ge nanomembrane designed to enhance its photoluminescence (PL). The fabrication process involves growing a GeSn/Ge/Si heterostructure on a silicon-on-insulator (SOI) substrate, followed by selective etching to release the nanomembrane. This process results in a rolled-up configuration, which not only relaxes the compressive strain but also achieves tensile strain on the GeSn layer, confirmed by Raman measurements.
View Article and Find Full Text PDFJ Am Chem Soc
June 2025
School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637371.
Lewis-base-stabilized silicon species in the zero oxidation state are crucial for transforming elemental silicon into valuable compounds. The synthesis of a cyclic tetraatomic silicon(0) cluster, stabilized by four-membered cyclic alkyl(amino) carbenes, is reported. It is a versatile one, two, or four silicon atom source, demonstrating cluster isomerization or fragmentation.
View Article and Find Full Text PDFRSC Adv
May 2025
Dalian Univ. Technol., Key Lab. Mat. Modificat. Laser Ion & Electron Beams, Minist. Educ., Sch. Mat. Sci. & Engn, . 2 Linggong Rd Dalian 116024 People's Republic of China
Silicon nitride films with high tensile stress have great application potential in the strained silicon technology field. However, the current understanding of the mechanisms governing tensile stress development in films, particularly in multilayered structures, following diverse plasma treatments remains limited. Herein, the influence mechanism of He, Ar, and N plasma bombardment on the development of stress in monolayer and multilayer films is investigated and compared in greater depth.
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