Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
We investigated the effects of Si nanowire (SiNW) dimensions and their surface modifications on the pH-dependent electronic transport characteristics of SiNW Electrolyte-insulator-Semiconductor Field-Effect Transistors (EISFETs). The threshold voltages, Vth's, of all devices were extracted from the Id-Vg characteristics with Vg applied to the reference electrode immersed in different pH solutions, and their pH-dependences were analyzed for various devices. We found that our devices produce the systematic pH-dependence of Vth with respect to the SiNW's length and show significant changes in a linear pH region and a pH sensitivity upon the Si surface modifications. Particularly in the case of the APTES-treated surface, the linear variation was observed in the wide region of pH = 2 to approximately 11 with the sensitivity of 54.7 +/- 0.6 mV/pH. Also we compared our data to a theoretical result based on the Gouy-Chapmam-Stern-Graham model and found a reasonable agreement between them.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1166/jnn.2012.6362 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Radiation-induced single event effects in vertically prolonged drain dual gate Si Ge source TFET.
J Mol Model
September 2025
Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar, India.
Context: This study investigates the radiation tolerance of a SiGe source vertical tunnel field effect transistor (VTFET) under heavy ion-induced single event effects (SEEs). Single event effects (SEEs) occur when high-energy particles interact with semiconductor devices, leading to unintended behavior. The effect of high energy ions on the VTFET is examined for various linear energy transfer (LET) values and at multiple ion hit locations.
View Article and Find Full Text PDFHigh-Performance Air-Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics.
Adv Mater
September 2025
State Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, 100029, China.
The monolayer transistor, where the semiconductor layer is a single molecular layer, offers an ideal platform for exploring transport mechanisms both theoretically and experimentally by eliminating the influence of spatially correlated microstructure. However, the structure-property relations in polymer monolayers remain poorly understood, leading to low transistor performance to date. Herein, a self-confinement effect is demonstrated in the polymer monolayer with nanofibrillar microstructures and edge-on orientation, as characterized by the 4D scanning confocal electron diffraction method.
View Article and Find Full Text PDFAryl-Diazafluoren(on)es for Organic Optoelectronics: Toward Air-Stable N-type OFETs and Gas Sensors.
ACS Appl Mater Interfaces
September 2025
N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS, Novosibirsk 630090, Russia.
While fluorene-containing materials are widely used in organic optoelectronics as bright emitters and hole semiconductors, their diazafluorene analogues have been poorly explored, though their nitrogen atoms could result in electron transport and bring sensory abilities. Here, we report the synthesis, characterization, and detailed study of a series of 4,5-diazafluorene-derivatives with different donor/acceptor substituents and organic semiconductors based on these molecules. The crystal structures of all the materials were solved by X-ray diffraction, indicating the presence of extensive π-stacking and anisotropic charge-transfer pathways.
View Article and Find Full Text PDFWafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS Devices Enabled by Plasma-Enhanced Atomic Layer Deposition.
ACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFA review on n-type chemical doping of graphene films: preparation, characterization and applications.
Nanoscale
September 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Chemical doping has emerged as a powerful approach for modulating the electronic properties of graphene, and particularly for enabling its integration into advanced electronic and optoelectronic devices. While considerable progress has been made in achieving stable p-type doping, realizing efficient and reliable n-type doping remains a greater challenge due to the inherent instability of most electron-donating dopants and intrinsic semi-metallic nature of pristine graphene. This review summarises the recent developments in n-type chemical doping of graphene films, with a primary focus on substitutional doping and surface charge transfer mechanisms.
View Article and Find Full Text PDF