Antimony selenide phase-change nanowires for memory application.

J Nanosci Nanotechnol

Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea.

Published: February 2011


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Article Abstract

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.

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http://dx.doi.org/10.1166/jnn.2011.3385DOI Listing

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