Recent progress of GaO materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method.

Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (GaO) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, GaO material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap.

A dual-mode organic memristor for coordinated visual perceptive computing.

The hierarchically coordinated processing of visual information with the data degradation characteristic embodies the energy consumption minimization and signal transmission efficiency maximization of brain activities. This inspires machine vision to handle the explosively increased data in real-time. In this contribution, we demonstrate the possibility of constructing a coordinated perceptive computing paradigm with dual-mode organic memristors to emulate the visual processing capability of the brain systems.

Charge-Transporting-Layer-Free, Vacuum-Free, All-Inorganic CsPbIBr Perovskite Solar Cells Via Dipoles-Adjusted Interface.

The inorganic perovskite has a better stability than the hybrid halide perovskite, and at the same time it has the potential to achieve an excellent photoelectric performance as the organic-inorganic hybrid halide perovskite. Thus, the pursuit of a low-cost and high-performance inorganic perovskite solar cell (PSC) is becoming the research hot point in the research field of perovskite devices. In setting out to build vacuum-free and carbon-based all-inorganic PSCs with the traits of simple fabrication and low cost, we propose the ones with a simplified vertical structure of FTO/CsPbIBr/carbon upon interfacial modification with PEI species.

Toward High-Performance Electron/Hole-Transporting-Layer-Free, Self-Powered CsPbIBr Photodetectors via Interfacial Engineering.

Self-powered photodetectors (PDs) with inorganic lead halide perovskites hold multiple traits of high sensitivity, fast response, independence from external power supply, and excellent sustainability and stability, thus holding a great promise for practical applications. However, they generally contain high-temperature-processed electron-transporting layers (ETLs) and high-cost, unstable hole-transporting layers (HTLs) coupled with noble metal electrodes, which bring significant obstacles of production cost and stability for their potential commercialization. Herein, we demonstrate the building of high-performance HTL/ETL-free, self-powered CsPbIBr PD with simplified architecture of fluorine-doped tin oxide (FTO)/CsPbIBr/carbon upon interfacial modification by polyethyleneimine (PEI).