Planar Optical Antenna-Driven Brightness Enhancement of Interface-Confined Hexagonal Boron Nitride Single-Photon Arrays for Scalable Room-Temperature Quantum Chips.

While hexagonal boron nitride (hBN) hosts promising room-temperature quantum emitters for hybrid quantum photonic circuits, scalable deterministic integration and insufficient brightness alongside low photon collection and coupling efficiencies remain unresolved challenges. We present a femtosecond laser nanoengineering platform that enables the site-specific generation of hBN single-photon source (SPS) arrays. First-principles density functional theory (DFT) calculations and polarization-resolved spectroscopy confirm the atomic origin of emission as interfacial defects at hBN/SiO heterojunctions.

Van der Waals integrated single-junction light-emitting diodes exceeding 10% quantum efficiency at room temperature.

The construction of miniaturized light-emitting diodes (LEDs) with high external quantum efficiency (EQE) at room temperature remains a challenge for on-chip optoelectronics. Here, we demonstrate microsized LEDs fabricated by a dry-transfer van der Waals (vdW) integration method using typical layered Ruddlesden-Popper perovskites (RPPs). A single-crystalline layered RPP nanoflake is used as the active layer and sandwiched between two few-layer graphene contacts, forming van der Waals LEDs (vdWLEDs).

A source of entangled photons based on a cavity-enhanced and strain-tuned GaAs quantum dot.

Unlabelled: A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner.

Validated enhancement and temperature modulated absorbance of a WS monolayer based on a planar structure.

Transition-metal dichalcogenides (TMDCs), as emerging optoelectronic materials, necessitate the establishment of an experimentally viable system to study their interaction with light. In this study, we propose and analyze a WS/PMMA/Ag planar Fabry-Perot (F-P) cavity, enabling the direct experimental measurement of WS absorbance. By optimizing the structure, the absorbance of A exciton of WS up to 0.

Interfacial Effect on the Transient Dielectric Function and Charge Transfer in a Monolayer WS/Si Heterojunction.

Monolayer tungsten disulfide (WS) is a highly promising material for silicon photonics. Thus, the WS/Si interface plays a very important role due to the interfacial complex effects and abundant states. Among them, the effect of charge transfer on exciton dynamics and the optoelectronic property is determined by the dielectric function, which is very crucial for the performance of optoelectronic devices.

Silver nanoparticle-induced enhancement of light extraction in two-dimensional light-emitting diodes.

Monolayer transition metal dichalcogenides (TMDCs) with direct bandgaps are considered promising candidates for building light-emitting diodes (LEDs). One crucial indicator of their performance is the brightness of electroluminescence (EL). In this study, we fabricate WS-based LEDs that make full use of the assistance of effective transient-mode charge injection.

Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement.

Entangled photon pairs are essential for a multitude of quantum photonic applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers.

Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics.

The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in-plane uniaxial stress.