Progress in Spin Logic Devices Based on Domain-Wall Motion.

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored.

A quantum sensing metrology for magnetic memories.

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device properties becomes a key enabler of new applications at this stage of technology development. Here, we introduce a non-contact metrology technique deploying scanning NV magnetometry (SNVM) to investigate MRAM performance at the individual bit level.

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions.

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping () and fieldlike () torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal () and transverse () components of the SOT vector and its efficiency χ and χ, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ).

Distributions of easy axes and reversal processes in patterned MRAM arrays.

The distribution of the easy-axes in an array of MRAM cells is a vital parameter to understand the switching and characteristics of the devices. By measuring the coercivity as a function of applied-field angle, and remaining close to the perpendicular orientation, a classic Stoner-Wohlfarth approximation has been applied to the resulting variation to determine the standard deviation, [Formula: see text], of a Gaussian distribution of the orientation of the easy-magnetisation directions. In this work we have compared MRAM arrays with nominal cells sizes of 20 nm and 60 nm and a range of free layer thicknesses.

Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current.

Two-dimensional materials prospects for non-volatile spintronic memories.

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies.

The influence of phonon softening on the superconducting critical temperature of Sn nanostructures.

The increase in superconducting transition temperature (T) of Sn nanostructures in comparison to bulk, was studied. Changes in the phonon density of states (PDOS) of the weakly coupled superconductor Sn were analyzed and correlated with the increase in T measured by magnetometry. The PDOS of all nanostructured samples shows a slightly increased number of low-energy phonon modes and a strong decrease in the number of high-energy phonon modes in comparison to the bulk Sn PDOS.

Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions.

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement in the timescales that underlie the current-driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device.

Ferroelectric Control of Magnetism in Ultrathin HfO\Co\Pt Layers.

The recent demonstration of ferroelectricity in ultrathin HfO has kickstarted a new wave of research into this material. HfO in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO ( = 6.

Cobalt nanoparticles growth on a block copolymer thin film: a time-resolved GISAXS study.

Cobalt sputter deposition on a nanostructured polystyrene-block-poly(ethylene oxide), P(S-b-EO), template is followed in real time with grazing incidence small-angle X-ray scattering (GISAXS). The polymer template consists of highly oriented parallel crystalline poly(ethylene oxide) (PEO) domains that are sandwiched between two polystyrene (PS) domains. In-situ GISAXS shows that cobalt atoms selectively decorate the PS domains of the microphase-separated polymer film and then aggregate to form surface metal nanopatterns.

Growth and morphology of sputtered aluminum thin films on P3HT surfaces.

Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer.

Time-resolved ultrathin cobalt film growth on a colloidal polymer template.

Cobalt (Co) sputter deposition onto a colloidal polymer template is investigated using grazing incidence small-angle X-ray scattering (GISAXS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). SEM and AFM data picture the sample topography, GISAXS the surface and near-surface film structure. A two-phase model is proposed to describe the time evolution of the Co growth.

Collective Lamb shift in single-photon superradiance.

Superradiance, the cooperative spontaneous emission of photons from an ensemble of identical atoms, provides valuable insights into the many-body physics of photons and atoms. We show that an ensemble of resonant atoms embedded in the center of a planar cavity can be collectively excited by synchrotron radiation into a purely superradiant state. The collective coupling of the atoms via the radiation field leads to a substantial radiative shift of the transition energy, the collective Lamb shift.

In situ GISAXS study of gold film growth on conducting polymer films.

The growth of a thin gold film on a conducting polymer surface from nucleation to formation of a continuous layer with a thickness of several nanometers is investigated in situ with grazing incidence small-angle X-ray scattering (GISAXS). Time resolution is achieved by performing the experiment in cycles of gold deposition on poly(N-vinylcarbazole) (PVK) and subsequently recording the GISAXS data. The 2D GISAXS patterns are simulated, and morphological parameters of the gold film on PVK such as the cluster size, shape, and correlation distance are extracted.

A compact UHV deposition system for in situ study of ultrathin films via hard x-ray scattering and spectroscopy.

We report on a compact ultrahigh vacuum deposition system developed for in situ experiments using hard x rays. The chamber can be mounted on various synchrotron beamlines for spectroscopic as well as scattering experiments in grazing incidence geometry. The deposition process is completely remotely controlled and an ellipsometer is available for online monitoring of the layer growth process.

How metallic Fe controls the composition of its native oxide.

We have studied in situ the oxidation of ultrathin iron layers and monitored the chemical changes induced by subsequent deposition of Fe metal using hard x-ray absorption spectroscopy. The site sensitivity of the technique allows us to quantify the composition of the layer throughout the oxidation or deposition process. It is found that the thin native oxide incorporates a significant fraction of Fe atoms remaining in a metallic configuration even in the saturated state.