Publications by authors named "Pargam Vashishtha"

Liquid metal (LM) alloys have attracted significant interest as exceptional functional materials due to their wide range of applications. Although significant theoretical advancements have been made, the experimental investigation of surface oxides in complex metal alloys remains largely unexplored. This study investigates the formation of surface oxide in eutectic zinc (Zn)-tin (Sn) alloy to increase the understanding of composite metal oxides and enable new technological applications.

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The stacking orientation of bilayer two-dimensional (2D) materials introduces an additional degree of freedom that can profoundly influence their electronic, optoelectronic, and electrochemical properties. While stacking-engineered phenomena such as ferroelectricity, superconductivity, and second harmonic generation have been widely studied in bilayer molybdenum disulfide (MoS), their impact on functional device performance, particularly photoresponse and electrocatalysis, remains largely unexplored. Here, we investigate how the stacking configuration governs the optoelectronic and electrocatalytic behavior of bilayer MoS, focusing on the two stable stacking orders: 2H and 3R synthesized via chemical vapor deposition (CVD).

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High-temperature neuromorphic devices are vital for space exploration and operations in harsh environments such as manufacturing units. To fulfil this need, researchers are developing technologies that imitate the human brain in structure and function. This need is further pushed by the growth of the Internet of Things (IoT), demanding massive computing power and processing of data.

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In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due to various challenges occurring during the fabrication of TE devices, particularly the development of stable contacts with low interfacial resistance. In this study, we have made an effort to explore a stable contact material with low interfacial resistance for an n-type TiCoSb-based TE material, specifically TiNbCoSbBi as a proof of concept, using a straightforward facile synthesis route of spark plasma sintering.

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Modern-day applications demand onboard electricity generation that can be achieved using piezoelectric phenomena. Reducing the dimensionality of materials is a pathway to enhancing the piezoelectric properties. Transition-metal dichalcogenides have been shown to exhibit high piezoelectricity.

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Two-dimensional transition metal dichalcogenides (TMDs), such as MoS, hold great promise for next-generation electronics and optoelectronics due to their unique properties. However, the ultrathin nature of these materials renders them vulnerable to structural defects and environmental factors, which significantly impact their performance. Sulfur vacancies (V) are the most common intrinsic defects in MoS, and their impact on device performance in oxidising environments remains understudied.

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Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS/GaN) epitaxial heterostructure.

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In the current study, α-Bi O and β-Bi O were synthesised using a one-step, novel, solid-solid combustion technique. The reaction rate was increased with the use of microwaves (molecular heating) compared to direct or indirect heating. A strong relationship was observed between the fuel, polymorphic structure, shape and optical properties of the synthesised Bi O .

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The UV/Visible activated near-infrared (NIR) phosphors have many applications in solid state lighting, night vision devices and bio-imaging. The early research reported the red-NIR emitting phosphors doped with Crcenters upon visible light excitation. Here, in this work the intense red-NIR emission and color tuning is achieved for broad excitation range (UV/blue/green) through Cr dopant induced defect centers and cation inversionWe present the infuence of Cr dopant induced defect centers and cation inversion in MgCrAlO(x= 0.

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Gallium oxide is an ultra-wide band gap semiconductor (Eg > 4.4 eV), best suited intrinsically for the fabrication of solar-blind photodetectors. Apart from its crystalline phases, amorphous Ga2O3 based solar-blind photodetector offer simple and facile growth without the hassle of lattice matching and high temperatures for growth and annealing.

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Article Synopsis
  • A novel ultraviolet photodetector featuring unique taper-ended GaN-Nanotower structures demonstrates superior performance through a high surface-to-volume ratio and excellent morphology, leading to efficient photocurrent generation.
  • The device exhibits remarkable specifications, including a low dark current (~12 nA), high I/I ratio (>10), and a fast response time (~433 µs) under ultraviolet light (325 nm), achieving a photoresponsivity of 2.47 A/W in self-powered mode.
  • Enhanced performance is attributed to the lower strain and dislocations in the nanotower structure, along with a significant electric field resulting from varying Schottky barrier heights, making these structures promising for energy-efficient UV photodetector applications.
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We report, for the first time, the influence of oxygen vacancies on band structure and local electronic structure of [Formula: see text] (SZO) nanophosphors by combined first principle calculations based on density functional theory and full multiple scattering theory, correlated with experimental results obtained from X-ray absorption and photoluminescence spectroscopies. The band structure analysis from density functional theory revealed the formation of new energy states in the forbidden gap due to introduction of oxygen vacancies in the system, thereby causing disruption in intrinsic symmetry and altering bond lengths in SZO system. These defect states are anticipated as origin of observed photoluminescence in SZO nanophosphors.

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The correlation of several defects and optical and magnetic properties with Fe content in ZnFeAlO (0.01 ≤ x ≤ 0.40) nanocrystals has been scrutinized through X-ray diffraction, O K-edge X-ray absorption near-edge structure, FT-IR, diffuse reflectance, photoluminescence and electron spin-resonance spectroscopies, and vibrating sample magnetometry.

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In presented work, excitation selective novel cool and cold white emission is reported from dysprosium (Dy) doped SrZnOnanophosphors, synthesized by combustion technique. The host lattice provided selective excitation routes for Dylevels and intrinsic defects levels via charge transfer (270 nm) and host defects absorption bands (375 nm), respectively. The emission due to Dylevels was found to be exhibiting cool white emission and that from intrinsic defects was cold white emission, as characterized from correlated color temperature.

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The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The devices with uniformly distributed Au NPs on GaN nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented.

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