A Voltage-Tuned Terahertz Absorber Based on MoS/Graphene Nanoribbon Structure.

Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge.

Erratum: Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAlO Quasi-Quantum Well Structures.

[This corrects the article DOI: 10.1002/advs.201901438.

Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAlO Quasi-Quantum Well Structures.

The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well-shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi-QW structure of Cr/ultrathin-Fe/MgAlO(001)/Fe, in which the Cr quasi-barrier layer confines up-spin electrons to the Fe well, are prepared with perfectly lattice-matched interfaces and atomic layer number control. Resonant peaks are clearly observed in the differential conductance of the MTJs due to the formation of QWs.