Diamond sensors for hard X-ray energy and position resolving measurements at the European XFEL.

The diagnostics of X-ray beam properties has a critical importance at the European X-ray Free-Electron Laser facility. Besides existing diagnostic components, utilization of a diamond sensor was proposed to achieve radiation-hard, non-invasive beam position and pulse energy measurements for hard X-rays. In particular, with very hard X-rays, diamond-based sensors become a useful complement to gas-based devices which lose sensitivity due to significantly reduced gas cross-sections.

Kinetics of the Thermal Oxidation of Ir(100) toward IrO Studied by Ambient-Pressure X-ray Photoelectron Spectroscopy.

Using time-lapsed ambient-pressure X-ray photoelectron spectroscopy, we investigate the thermal oxidation of single-crystalline Ir(100) films toward rutile IrO(110) in situ. We initially observe the formation of a carbon-free surface covered with a complete monolayer of oxygen, based on the binding energies of the Ir 4f and O 1s core level peaks. During a rather long induction period with nearly constant oxygen coverage, the work function of the surface changes continuously as sensed by the gas phase O 1s signal.

Microstructural Effect on the Enhancement of Field Electron Emission Properties of Nanocrystalline Diamond Films by Li-Ion Implantation and Annealing Processes.

The impact of lithium-ion implantation and postannealing processes on improving the electrical conductivity and field electron emission (FEE) characteristics of nitrogen-doped nanocrystalline diamond (nNCD) films was observed to be distinctly different from those of undoped NCD (uNCD) films. A high-dose Li-ion implantation induced the formation of electron trap centers inside the diamond grains and amorphous carbon (a-C) phases in grain boundaries for both types of NCD films. Postannealing at 1000 °C healed the defects, eliminated the electron trap centers, and converted the a-C into nanographitic phases.

Centimeter-Sized Single-Orientation Monolayer Hexagonal Boron Nitride With or Without Nanovoids.

Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids. However, scalable production beyond exfoliation from bulk single crystals remained a major challenge. Single-orientation monolayer h-BN nanomesh is grown on 4 in.

Pulse-resolved intensity measurements at a hard X-ray FEL using semi-transparent diamond detectors.

Solid-state ionization chambers are presented based on thin diamond crystals that allow pulse-resolved intensity measurements at a hard X-ray free-electron laser (FEL), up to the 4.5 MHz repetition rate that will become available at the European XFEL. Due to the small X-ray absorption of diamond the thin detectors are semi-transparent which eases their use as non-invasive monitoring devices in the beam.

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers.

A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion bombardment induced formation and lateral spread of epitaxial diamond within a ~1 nm thick carbon layer. Starting from one single primary nucleation event the buried epitaxial island can expand laterally over distances of several microns.

Localization of Narrowband Single Photon Emitters in Nanodiamonds.

Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bioimaging. However, current understanding of the origin of these emitters is extremely limited. In this work, we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds.

Magnetic Nano-skyrmion Lattice Observed in a Si-Wafer-Based Multilayer System.

Growth, electronic properties, and magnetic properties of an Fe monolayer (ML) on an Ir/YSZ/Si(111) multilayer system have been studied using spin-polarized scanning tunneling microscopy. Our experiments reveal a magnetic nano-skyrmion lattice, which is fully equivalent to the magnetic ground state that has previously been observed for the Fe ML on Ir(111) bulk single crystals. In addition, the experiments indicate that the interface-stabilized skyrmion lattice is robust against local atomic lattice distortions induced by multilayer preparation.

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond.

Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.

Graphene from fingerprints: exhausting the performance of liquid precursor deposition.

Epitaxial graphene is expected to be the only way to obtain large-area sheets of this two-dimensional material for applications on an industrial scale. So far, there are different recipes for epitaxial growth of graphene, using either intrinsic carbon, such as the selective desorption of silicon from a SiC surface, or extrinsic carbon, as via the chemical vapor deposition (CVD) of simple hydrocarbons on transition metal surfaces. In addition, even liquid precursor deposition (LPD) provides well-ordered graphene monolayers.

Optical signatures of silicon-vacancy spins in diamond.

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties.

Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond.

The negatively charged nitrogen-vacancy (NV) centre exhibits outstanding optical and spin properties and thus is very attractive for applications in quantum optics. Up to now an active control of the charge state of near-surface NV centres is difficult and the centres switch in an uncontrolled way between different charge states. In this work, we demonstrate an active control of the charge state of NV centres (implanted 7 nm below the surface) by using an in-plane Schottky diode geometry from aluminium on hydrogen terminated diamond in combination with confocal micro-photoluminescence measurements.

Increasing the wear resistance by interstitial alloying with boron via chemical vapor deposition.

The wear resistance of a Rh(111) surface can be strongly increased by interstitial alloying with boron atoms via chemical vapor deposition of trimethylborate [B(OCH3)3] at moderate temperatures of about 800 K. The fragmentation of the precursor results in single boron atoms that are incorporated in the fcc lattice of the substrate, as displayed by X-ray photoelectron diffraction. The penetration depth of the boron atoms is in the range of at least 100 nm with the boron distribution displaying a nearly homogeneous depth profile, as examined by combined X-ray photoelectron spectroscopy and Ar ion etching experiments.

Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition.

The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided.

One- and two-dimensional photonic crystal microcavities in single crystal diamond.

Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins.

STM, SECPM, AFM and Electrochemistry on Single Crystalline Surfaces.

Scanning probe microscopy (SPM) techniques have had a great impact on research fields of surface science and nanotechnology during the last decades. They are used to investigate surfaces with scanning ranges between several 100 mm down to atomic resolution. Depending on experimental conditions, and the interaction forces between probe and sample, different SPM techniques allow mapping of different surface properties.

How does graphene grow? Easy access to well-ordered graphene films.

The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms.