Demonstration of passive, nonlinear, and active devices on a hybrid photonic platform.

The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.

Octave-spanning supercontinuum generation in a CMOS-compatible thin SiN waveguide coated with highly nonlinear TeO.

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (SiN) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the SiN waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm SiN platform using a highly nonlinear tellurium oxide (TeO) coating.

Silicon-thulium hybrid microdisk lasers with low threshold and wide emission wavelength range.

We demonstrate low-threshold and wide emission wavelength range hybrid-integrated silicon-thulium microdisk lasers based on a pulley-coupled design. The resonators are fabricated on a silicon-on-insulator platform using a standard foundry process and the gain medium is deposited using a straightforward, low-temperature post-processing step. We show lasing in 40- and 60-µm diameter microdisks with up to 2.

Hybrid silicon-tellurium-dioxide DBR resonators coated in PMMA for biological sensing.

We report on silicon waveguide distributed Bragg reflector (DBR) cavities hybridized with a tellurium dioxide (TeO) cladding and coated in plasma functionalized poly (methyl methacrylate) (PMMA) for label free biological sensors. We describe the device structure and fabrication steps, including reactive sputtering of TeO and spin coating and plasma functionalization of PMMA on foundry processed Si chips, as well as the characterization of two DBR designs via thermal, water, and bovine serum albumin (BSA) protein sensing. Plasma treatment on the PMMA films was shown to decrease the water droplet contact angle from ∼70 to ∼35°, increasing hydrophilicity for liquid sensing, while adding functional groups on the surface of the sensors intended to assist with immobilization of BSA molecules.

Application of the TDFA window in true optical time delay systems.

Recent advances in silicon photonic components operating in the thulium-doped fiber amplifier (TDFA) wavelength regime around 2-µm have shown that these wavelengths hold great promise for on-chip photonic systems. Here we present our work on characterizing a Mach-Zehnder interferometer coupled silicon photonic ring resonator operating in the TDFA window for optical time delay applications. We describe the optical transmission and variable time delay properties of the resonator, including a detailed characterization and comparison of the directional coupler and Mach-Zehnder interferometer base components at both 1930 and 1550 nm wavelengths.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher's note.

This publisher's note contains corrections to Opt. Lett.44, 5788 (2019)OPLEDP0146-959210.

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching.

We report on the fabrication and optical characterization of erbium-ytterbium co-doped aluminum oxide (AlO:Er:Yb) waveguides using low-cost, low-temperature deposition and etching steps. We deposited AlO:Er:Yb films using reactive co-sputtering, with Er and Yb ion concentrations ranging from 1.4-1.

Subwavelength grating metamaterial waveguides functionalized with tellurium oxide cladding.

We report on the design, fabrication and characterization of subwavelength grating metamaterial waveguides coated with tellurium oxide. The structures are first fabricated using a standard CMOS compatible process on a silicon-on-insulator platform. Amorphous tellurium oxide top cladding material is then deposited via post-process RF magnetron sputtering.

A Silicon Photonic Data Link with a Monolithic Erbium-Doped Laser.

To meet the increasing demand for data communication bandwidth and overcome the limits of electrical interconnects, silicon photonic technology has been extensively studied, with various photonics devices and optical links being demonstrated. All of the optical data links previously demonstrated have used either heterogeneously integrated lasers or external laser sources. This work presents the first silicon photonic data link using a monolithic rare-earth-ion-doped laser, a silicon microdisk modulator, and a germanium photodetector integrated on a single chip.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip.

We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.

Low-loss TeO-coated SiN waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the SiN strip height and width and TeO layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO can be obtained.

High-Q tellurium-oxide-coated silicon nitride microring resonators.

We report on tellurium-oxide (TeO)-coated silicon nitride microring resonators with internal quality factors up to 7.3×10, corresponding to 0.5 dB/cm waveguide loss, at wavelengths around 1550 nm.

A Tellurium Oxide Microcavity Resonator Sensor Integrated On-Chip with a Silicon Waveguide.

We report on thermal and evanescent field sensing from a tellurium oxide optical microcavity resonator on a silicon photonics platform. The on-chip resonator structure is fabricated using silicon-photonics-compatible processing steps and consists of a silicon-on-insulator waveguide next to a circular trench that is coated in a tellurium oxide film. We characterize the device's sensitivity by both changing the temperature and coating water over the chip and measuring the corresponding shift in the cavity resonance wavelength for different tellurium oxide film thicknesses.

Optically pumped rare-earth-doped AlO distributed-feedback lasers on silicon [Invited].

This paper reviews recent progress in the field of optically pumped rare-earth-doped channel waveguide lasers, with a focus on operation utilizing distributed-feedback resonators on silicon wafers. Rare-earth-doped amorphous aluminum oxide thin films have been deposited onto silicon wafers by RF reactive co-sputtering from metallic Al and rare-earth targets, the spectroscopy and optical gain of Er, Yb, Nd, and Tm ions has been investigated, and the near-infrared laser transitions near 1 μm in Yb, 1.5 μm in Er, and 2 μm in Tm and Ho have been demonstrated.

High-Q-factor AlO micro-trench cavities integrated with silicon nitride waveguides on silicon.

We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step.

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform.

Monolithically-integrated distributed feedback laser compatible with CMOS processing.

An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.

Ultra-narrow-linewidth AlO:Er lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.

We report ultra-narrow-linewidth erbium-doped aluminum oxide (AlO:Er) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiN) segments buried under silicon dioxide (SiO) with a layer AlO:Er deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm).

Athermal synchronization of laser source with WDM filter in a silicon photonics platform.

In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR.

Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform.

We demonstrate monolithic integration of a wavelength division multiplexed light source for silicon photonics by a cascade of erbium-doped aluminum oxide (AlO:Er) distributed feedback (DFB) lasers. Four DFB lasers with uniformly spaced emission wavelengths are cascaded in a series to simultaneously operate with no additional tuning required. A total output power of -10.

High-power thulium lasers on a silicon photonics platform.

Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.

Ultra-compact and low-threshold thulium microcavity laser monolithically integrated on silicon.

We demonstrate an ultra-compact and low-threshold thulium microcavity laser that is monolithically integrated on a silicon chip. The integrated microlaser consists of an active thulium-doped aluminum oxide microcavity beside a passive silicon nitride bus waveguide, which enables on-chip pump-input and laser-output coupling. We observe lasing in the wavelength range of 1.

Multimode phase-matched third-harmonic generation in sub-micrometer-wide anatase TiO₂ waveguides.

Third-harmonic generation (THG) has applications ranging from wavelength conversion to pulse characterization, and has important implications for quantum sources of entangled photons. However, on-chip THG devices are nearly unexplored because bulk techniques are difficult to adapt to integrated photonic circuits. Using sub-micrometer-wide polycrystalline anatase TiO₂ waveguides, we demonstrate third-harmonic generation on a CMOS-compatible platform.

Monolithic erbium- and ytterbium-doped microring lasers on silicon chips.

We demonstrate monolithic 160-µm-diameter rare-earth-doped microring lasers using silicon-compatible methods. Pump light injection and laser output coupling are achieved via an integrated silicon nitride waveguide. We measure internal quality factors of up to 3.

CMOS-compatible 75 mW erbium-doped distributed feedback laser.

On-chip, high-power, erbium-doped distributed feedback lasers are demonstrated in a CMOS-compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features, defined by wafer-scale immersion lithography and an erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The large mode size lasers demonstrate single-mode continuous wave operation with a maximum output power of 75 mW without any thermal damage.