High-performance p-type bilayer WSe field effect transistors by nitric oxide doping.

Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe synthesized via an industry-compatible metal-organic chemical vapor deposition (MOCVD) process. These devices achieve on-state current as high as 421 μA/μm at a drain voltage of 1 V and a gate overdrive voltage of 2.

Pretreatment diffusion-weighted imaging for prediction of relapsed and refractory primary central nervous system lymphoma.

Objectives: A subset of primary central nervous system lymphoma (PCNSL) has been shown to undergo an early relapsed/refractory (R/R) period after first-line chemotherapy. This study investigated the pretreatment clinical and MRI features to predict R/R in PCNSL, emphasizing the apparent diffusion coefficient (ADC) values in diffusion-weighted imaging (DWI).

Methods: This retrospective study investigated the pretreatment MRI features for predicting R/R in PCNSL.