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Heat exposure is an increasing threat to human health and accurately monitoring core body temperature is vital to avoiding heat-related illnesses during exercise and outdoor occupations. Recently, a wearable device (CORE) was developed to non-invasively estimate core body temperature (T). The purpose of this study was to determine the validity of the CORE sensor and identify subcutaneous fat as a potential contributor to the device's bias. Twenty-four healthy males (n = 13) and females (n = 11) completed 60 min of cycling exercise at 60 % of their maximum aerobic power output (166 ± 46.5 W) in the heat (35.9 °C & 20.7 % relative humidity). During exercise, T and skin temperature (T) measures from the CORE sensor were compared to rectal probe and skin surface probe, respectively. Midaxillary subcutaneous fat thickness (MSFT) at the site of the CORE sensor was measured via ultrasonography. Throughout the entire exercise bout, the CORE displayed a non-statistically significant overestimation of T (0.15 ± 0.43 °C, p = 0.057). However, CORE significantly overestimated T during the third (0.31 ± 0.43 °C, p = 0.002) and fourth (0.36 ± 0.45 °C, p = 0.004) quarters of exercise. CORE also significantly overestimated T (1.28 ± 0.96 °C, p < 0.0001) throughout the entire exercise bout. MSFT was positively correlated with the bias in T (overestimation by CORE) during the third (r = 0.438, p = 0.032) and fourth (r = 0.482, p = 0.017) quarters of exercise. In conclusion, compared to rectal temperature, the CORE sensor overestimated T during constant-load exercise in a hot environment. Overestimated T and local subcutaneous fat may be potential contributors to bias in the CORE sensor's T estimation.
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http://dx.doi.org/10.1016/j.jtherbio.2025.104241 | DOI Listing |
EMBO Rep
September 2025
Max Planck Unit for the Science of Pathogens, Berlin, D-10117, Germany.
The sensing of Gram-negative Extracellular Vesicles (EVs) by the innate immune system has been extensively studied in the past decade. In contrast, recognition of Gram-positive EVs by innate immune cells remains poorly understood. Comparative genome-wide transcriptional analysis in human monocytes uncovered that S.
View Article and Find Full Text PDFLight Sci Appl
September 2025
State Key Laboratory of Flexible Electronics, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China.
As the demand for edge platforms in artificial intelligence increases, including mobile devices and security applications, the surge in data influx into edge devices often triggers interference and suboptimal decision-making. There is a pressing need for solutions emphasizing low power consumption and cost-effectiveness. In-sensor computing systems employing memristors face challenges in optimizing energy efficiency and streamlining manufacturing due to the necessity for multiple physical processing components.
View Article and Find Full Text PDFAdv Mater
September 2025
Faculty of Chemistry, Adam Mickiewicz University, Uniwersytetu Poznańskiego 8, Poznań, 61-614, Poland.
AlN is a core material widely used as a substrate and heat sink in various electronic and optoelectronic devices. Introducing luminescent properties into intrinsic AIN opens new opportunities for next-generation intelligent sensors, self-powered displays, and wearable electronics. In this study, the first evidence is presented of AlN crystals exhibiting satisfactory mechanoluminescence (ML), photoluminescence (PL), and afterglow performance, demonstrating their potential as novel multifunctional optical sensors.
View Article and Find Full Text PDFProg Mol Biol Transl Sci
September 2025
School of Forensic Science, National Forensic Sciences University, Gandhinagar, Gujarat, India.
Ingestible biosensors are a mix of advanced biomedical engineering, digital health and precision pharmacotherapy. These miniaturised electronic devices are encapsulated in biocompatible materials, which operate within gastrointestinal (GI) tract. This enables real-time monitoring of pharmacological and physiological parameters.
View Article and Find Full Text PDFElife
September 2025
Department of Chemistry, University of Massachusetts, Amherst, United States.
Voltage-dependence gating of ion channels underlies numerous physiological and pathophysiological processes, and disruption of normal voltage gating is the cause of many channelopathies. Here, long timescale atomistic simulations were performed to directly probe voltage-induced gating transitions of the big potassium (BK) channels, where the voltage sensor domain (VSD) movement has been suggested to be distinct from that of canonical Kv channels but remains poorly understood. Using a Core-MT construct without the gating ring, multiple voltage activation transitions were observed at 750 mV, allowing detailed analysis of the activated state of BK VSD and key mechanistic features.
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