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Article Abstract
Memristors are promising for next-generation non-volatile memory and neuromorphic computing due to resistive switching (RS) behavior. Here, we demonstrate a chitosan-doped graphene oxide memristor with complementary RS, high stability, and repeatability. Voltage sweeps (±6 V) reveal RS with SET (0.9, -0.7 V) and RESET (2.25, -2 V) transitions, achieving an ON/OFF ratio of ∼104. The device maintains consistent complementary resistive switching over 2000 cycles, confirming non-volatile memory functionality. Statistical analysis shows SET/RESET distributions centered at 0.97 V/2.1 V (positive bias) and -1.1 V/-2.3 V (negative bias), indicating reliable switching. Pulse studies (3-5.5 V) reveal dynamic current responses linked to oxygen vacancy-based conductive filaments (CFs). A mechanistic model attributes RS to Vo migration and CF growth/dissolution between electrodes, with HRS1/HRS2 showing polarity-dependent asymmetry. In addition, a 1T1R unit integrating the memristor with a ZnO transistor enables gate-tunable memory operations and selector-free control. This work advances bio-organic memristors for high-density storage and neuromorphic systems.
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