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The kagome metal CsV_{3}Sb_{5} exhibits an unusual charge-density-wave (CDW) order, where the emergence of loop current order that breaks time-reversal symmetry (TRS) has been proposed. A key feature of this CDW phase is a nonmonotonic Hall effect at low fields, often attributed to TRS breaking. However, its origin remains unclear. Here, we conduct comprehensive magnetotransport measurements on CsV_{3}Sb_{5} and, through mobility spectrum analysis, identify the formation of tiny Fermi pockets with extremely high mobility below the CDW transition. Furthermore, electron irradiation experiments reveal that the nonmonotonic Hall effect is significantly suppressed in samples with reduced mobility, despite no substantial change in the electronic structure. These results indicate that the nonmonotonic Hall effect originates from these tiny Fermi pockets with high mobility carriers rather than anomalous Hall mechanisms, providing new insights into understanding the Hall anomaly in this kagome system.
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http://dx.doi.org/10.1103/d4dw-2v6k | DOI Listing |
Phys Rev Lett
August 2025
University of Tokyo, Department of Advanced Materials Science, Kashiwa, Chiba 277-8561, Japan.
The kagome metal CsV_{3}Sb_{5} exhibits an unusual charge-density-wave (CDW) order, where the emergence of loop current order that breaks time-reversal symmetry (TRS) has been proposed. A key feature of this CDW phase is a nonmonotonic Hall effect at low fields, often attributed to TRS breaking. However, its origin remains unclear.
View Article and Find Full Text PDFACS Nano
August 2025
Departamento de Física Aplicada, Universidad de Salamanca, 37008 Salamanca, Spain.
Moiré superlattices formed at the interface between stacked 2D atomic crystals offer limitless opportunities to design materials with widely tunable properties and engineer intriguing quantum phases of matter. However, despite progress, precise probing of the electronic states and tantalizingly complex band textures of these systems remain challenging. Here, we present gate-dependent terahertz photocurrent spectroscopy as a robust technique to detect, explore, and quantify intricate electronic properties in graphene moiré superlattices.
View Article and Find Full Text PDFNat Commun
July 2025
Department of Physics, Harvard University, Cambridge, MA, 02138, USA.
Integrating mirrors with magnetic components is crucial for constructing chiral optical cavities, which provide tunable platforms for time-reversal-asymmetric light-matter interactions. Here, we introduce single-crystal circular-polarization-selective mirrors based on chiral superconductors, which break time-reversal symmetry themselves, eliminating the need for additional components. We show that a circular-polarization-selective perfect reflection (CSPR) occurs for strong-coupling superconductors in the BCS-BEC crossover regime or beyond if the optical Hall conductivity is significant in the unit of conductivity quantum per unit layer, e/ha, where a is the lattice constant along the surface normal.
View Article and Find Full Text PDFNat Commun
March 2025
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan.
The electronic structure of compensated antiferromagnets (CAF) creates large functional responses, reminiscent of ferromagnets and suitable for data storage and readout, despite (nearly) net-zero spontaneous magnetization. Many experimental signatures of CAF - such as giant thermoelectric Nernst effects - should be enhanced when two or more electronic bands are nearly degenerate in vicinity of the Fermi energy. Here, we report a zero-field, thermoelectric Nernst effect >1 μV/K in the CAF CoNbS despite its tiny net magnetization ~2 milli - μ.
View Article and Find Full Text PDFACS Nano
March 2025
School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional heterojunctions provide a versatile platform for exploring various quantum properties. Here, we create bilayer 1T/2H-NbSe heterophase junctions and realize two types of stacking configurations with picometer-level lattice shifts. By high-resolution scanning tunneling microscopy/spectroscopy, we found that the electronic states are highly dependent on the stacking configurations of the 1T layer on the 2H one.
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