Perpendicular sheet-like alignment of a self-driven MoS/Si heterostructure for Vis-NIR wavelength detection.

In this article, a self-powered heterostructure based on perpendicularly aligned n-MoS/p-Si was fabricated for Vis-NIR wavelength detection. In particular, MoS sheet-like morphology was attained hydrothermal treatment at two crystallization temperatures (180 °C and 240 °C). The average thicknesses of the sheet-like structures were 85 and 45 nm for samples treated at 180 °C and 240 °C, respectively. The proposed geometry exhibited rectifying behavior, with the / ratio reaching the order of ∼10 at zero applied bias, indicating the self-powered nature of the demonstrated MoS/Si heterostructure; this was attained along with an value close to unity as a function of the applied light intensity variation. Photoresponsivity () exhibited wide reaching performance (Vis-NIR) with a peak value of 0.36 mA W at 625 nm and 6 mW cm, this was acquired at zero applied bias. demonstrated a descending profile as the intensity of incident light increased to 17 mW cm (0.19 mA W). The response and recovery time of the fabricated devices (180 °C and 240 °C) exhibited rather fast episodes with values of 0.178/0.181 and 0.176/0.185 s, respectively, which in turn indicated faster electron injection than recombination.