98%
921
2 minutes
20
Layered Na MO sodium oxide positive electrode materials have experienced renewed interest owing to the current commercial attention on sodium-ion batteries. Although there are many attractive qualities of these materials, they suffer from serious shortcomings owing to Na ordering and transition-metal layer gliding that cause a plethora of voltage plateaus during cycling. The P2-layered Na NiTeO (0 ≤ ≤ 0.5) system provides a framework for investigating the effect of dual Na substitution into the sodium layer and the transition-metal layer of the structure and its effects on the electrochemical properties of the materials. A careful investigation into the synthesis and properties of these materials reveals that the sodium content used during material preparation has a drastic effect on the composition and electrochemical profile of these materials. The sodium substitution disrupts ordering within the transition-metal layer, thereby disrupting Na ordering in the adjacent sodium layers. Beyond a critical sodium concentration, the layer stacking shifts, and all voltage plateaus of the P2-NaNiTeO material are no longer observed at 4.4 V versus Na/Na. These results also question the common belief that additional sodium precursor is required when preparing layered sodium oxide cathodes, providing new guidelines for material synthesis and characterization.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12079799 | PMC |
http://dx.doi.org/10.1021/acs.chemmater.4c02798 | DOI Listing |
Nanoscale
September 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2025
Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK.
Topochemical reduction of the n = 2 Ruddlesden-Popper oxide, LaSrCoRuO, yields LaSrCoRuO, a phase containing (Co/Ru)O squares which share corners to form 1D infinite double-chains. In contrast, fluorination of LaSrCoRuO yields the oxyfluoride LaSrCoRuOF, which can then be reduced to form LaSrCoRuOF. This reduced oxyfluoride is almost isoelectronic with LaSrCoRuO, but LaSrCoRuOF has a crystal structure in which the (Co/Ru)O squares are connected into 2D infinite sheets.
View Article and Find Full Text PDFMedicine (Baltimore)
September 2025
Department of Histology and Embryology, Faculty of Medicine, Dicle University, Diyarbakir, Turkey.
Excessive gestational weight gain (GWG) is associated with various adverse pregnancy outcomes, including disruption of placental function and fetal development. Iron transport through the placenta is crucial for fetal growth, and transferrin receptor 2 (TfR2) plays a key role in iron homeostasis. However, the effect of excessive GWG on placental TfR2 expression and neonatal iron parameters remains unclear.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and growth of insulators on monolayer MoS. Surveying a series of aluminum (AlO) precursors, we observe that increasing the length of the ligands reduces the nucleation delay of alumina on monolayer MoS, a phenomenon that we attribute to improved van der Waals dispersion interactions with the 2D material.
View Article and Find Full Text PDFNano Lett
September 2025
Department of Physics and Astronomy, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States.
In this study, using a set of scanning probe microscopy techniques, we investigate the electronic properties of the domain walls in the layered ferroelectric semiconductor of the transition metal oxide dihalide family, NbOI. Although the uniaxial ferroelectricity of NbOI allows only 180° domain walls, the pristine 2D flakes, where polarization is aligned in-plane, typically exhibit a variety of as-grown domain patterns outlined by the electrically neutral and charged domain walls. The electrically biased probing tip can modify the as-grown domain structures.
View Article and Find Full Text PDF