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In five-axis machining, deviations between actual and theoretical cutter contacting (CC) point trajectories lead to nonlinear errors, adversely affecting machining precision. This paper presents a novel method aimed at reducing nonlinear errors at CC points, enhancing overall accuracy in machining processes. We establish that interpolated CC points within a machining segment lie on the same plane, which provides a foundational insight into the geometric behavior of the machining system. To simplify the calculation process, we apply a geometric method to reduce the dimensionality of CC points, making the subsequent analysis more efficient. A harmonic function is then utilized to predict CC point trajectories, enabling effective compensation for identified errors. Our approach is integrated into five-axis linear trajectory interpolation, where it quantitatively addresses nonlinear errors that exceed tolerance limits. Comprehensive simulation and experimental validation demonstrate that this method not only maintains CC point errors within allowable limits but also significantly reduces tool center point errors. The results confirm the effectiveness of our method in enhancing machining precision, paving the way for improved performance in five-axis machining applications.
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http://dx.doi.org/10.1038/s41598-025-01766-w | DOI Listing |
Nature
September 2025
Department of Physics, University of California, Berkeley, CA, USA.
Trapped-ion applications, such as in quantum information processing, precision measurements, optical clocks and mass spectrometry, rely on specialized high-performance ion traps. The last three of these applications typically use traditional machining to customize macroscopic 3D Paul traps, whereas quantum information processing experiments usually rely on photolithographic techniques to miniaturize the traps and meet scalability requirements. Using photolithography, however, it is challenging to fabricate the complex 3D electrode structures required for optimal confinement.
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August 2025
School of Aeronautical Manufacturing and Mechanical Engineering, Nanchang Hangkong University, Nanchang, 330000, China.
The LN internal spray cooling, achieved through channels integrated within the tool, facilitates the delivery of liquid nitrogen to the vicinity of the cutting edge, thereby enabling precise cooling of the cutting area and enhancing the cooling efficiency of the liquid nitrogen. The implementation of LN internal spray cooling necessitates specialized tools. However, there is currently a lack of comprehensive technology for the development of such tools.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
At present, high-resolution and reliable inductive sensors have increasingly emerged as a pivotal component in the advancement of flexible electronic devices. The integration of liquid metal with flexible substrates presents a promising approach for the fabrication of inductive sensors. This paper introduces a novel paperclip-type helical coil inductive sensor, characterized by advancements in both structural design and a simplified manufacturing process.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
College of Engineering, Design and Physical Sciences, Brunel University London, London UB8 3PH, UK.
At present, there are some challenging issues for diamond electroplating devices, such as poor particle-cathode contact uniformity, low conductivity, inefficient deposition, and complex disassembly/cleaning process of the device. To overcome these issues, an ultrasonic oscillation-assisted nickel electroplating device is innovatively designed and presented in this paper. The device features: (1) innovative architecture enabling rapid disassembly; (2) ultrasonic enhancement of diamond particle mobility (frequency × amplitude); (3) optimized electrical contact interfaces.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
School of Mechanical and Electrical Engineering, Henan University of Technology, Zhengzhou 450001, China.
Single-crystal 4H silicon carbide (4H-SiC) is a key substrate material for third-generation semiconductor devices, where surface and subsurface integrity critically affect performance and reliability. This study systematically examined the evolution of surface morphology and subsurface damage (SSD) during nanoscratching of 4H-SiC under varying normal loads (0-100 mN) using a nanoindenter equipped with a diamond Berkovich tip. Scratch characteristics were assessed using scanning electron microscopy (SEM), while cross-sectional SSD was characterised via focused ion beam (FIB) slicing and transmission electron microscopy (TEM).
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