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Article Abstract
Hybrid metal halide materials have been demonstrated to show potential in spintronic applications. In the field of spintronics, controlling the spin degree of freedom by electrical means represents a significant advancement. In this work, we present a spintronic device with a ferromagnet/ferroelectric/ferromagnet heterostructure, in which a one-dimensional (1D) chiral hybrid metal halide serves as an interlayer. The ferroelectricity of the material has been confirmed through both experimental and theoretical approaches. Unlike conventional magnetic tunnel junctions, this multiferroic device exhibits four distinct resistance states, which can be tuned by magnetic and electric fields. Notably, the sign of magnetoresistance can be modulated by an applied bias voltage, demonstrating that the spin polarization of carriers injected from ferromagnetic electrodes can be controlled by an external electric field. Our study not only provides a feasible pathway for electrically controlled spin but also highlights the potential of chiral hybrid metal halides in spintronic applications.
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