Edge-induced selective etching of bilayer MoS kirigami structures a space-confined method.

Nanoscale Horiz

Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin, 300072, China.

Published: April 2025


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Article Abstract

The controllable preparation of edge arrangements, particularly the customization of zigzag edges on demand, remains elusive. Here, a selective etching strategy to directly regulate Mo-zigzag and S-zigzag edges of MoS kirigami structures is proposed, paving the way for edge engineering of 2D materials and providing promising candidates for next-generation optoelectronics.

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http://dx.doi.org/10.1039/d4nh00561aDOI Listing

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