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Article Abstract
Tapered diode lasers, composed of an index-guided ridge waveguide and a gain-guided tapered amplifier, are affected by polarization mismatch between the ridge and tapered sections. Beam quality deterioration is caused by TM high-order modes generated in the ridge section. Under high current injection, these TM modes are further amplified in the tapered section due to polarization mismatch, leading to a decrease in the laser output brightness. In this paper, a combination of deep etching in the ridge section and compressive stress in the tapered section is employed to obtain a fundamental mode seed source with a high TE degree of polarization (DOP), simultaneously improving the polarization match between the ridge and tapered sections. The fabricated tapered diode laser achieves a beam quality factor of M(1/e) = 1.2 at an output power of 11.57 W. The peak electro-optical efficiency is 59.8%, and the maximum output brightness reaches 936 MW·cm·sr.
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Tapered diode lasers, composed of an index-guided ridge waveguide and a gain-guided tapered amplifier, are affected by polarization mismatch between the ridge and tapered sections. Beam quality deterioration is caused by TM high-order modes generated in the ridge section. Under high current injection, these TM modes are further amplified in the tapered section due to polarization mismatch, leading to a decrease in the laser output brightness.
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