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Borophene, as a new material with various configurations, has attracted significant research attention in recent years. In this study, the electronic properties of a series of χ-type borophene nanoribbons (BNRs) are investigated using a first-principles approach. The results show that the width and edge pattern of the nanoribbons can effectively tune their electronic properties. Notably, a super-narrow χ-type BNR is found to be ferromagnetic and exhibits half-metallic properties. Based on these findings, a χ-type borophene nanojunction is proposed, and its spintronic transport properties are investigated using the non-equilibrium Green's function method combined with density functional theory. The results demonstrate that the nanojunction exhibits excellent spin filtering capabilities under moderate bias voltages when two electrodes are spin parallel. Furthermore, when the spin configurations of the two electrodes are changed from parallel to antiparallel, both the spin-up and spin-down currents demonstrate significant rectifying effects with reversed rectifying directions, and the rectification ratios reach up to 10. Consequently, opposite spin filtering polarizations are obtained for spin-up and spin-down currents. More intriguingly, such bipolar spin filtering and spin rectifying effects can also be achieved by compressing the width of either electrode by 5%, while maintaining the spin parallel configuration of two electrodes. Additionally, the resistance of the device is largely modulated by altering the magnetic configurations of the electrodes or narrowing the width of either electrode, leading to a giant magnetoresistance effect and a piezoresistance effect. These findings open up new avenues for future applications of borophene in spintronic nanodevices.
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http://dx.doi.org/10.1038/s41598-025-87132-2 | DOI Listing |
J Phys Chem Lett
September 2025
CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China.
Controlling the spatial arrangement of nanodots is pivotal for functional nanomaterials and biointerfaces, and the spontaneous self-assembly of block copolymer micelles has been widely used to fabricate ordered nanostructures. However, achieving tunable disorder remains a fundamental challenge. Here, we demonstrate how successive spin coating dynamically modulates both density and disorder in micellar arrays, revealing an unexpected non-monotonic evolution of structural order.
View Article and Find Full Text PDFNano Lett
August 2025
Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.
We report the emergence of an uncharted phenomenon, termed -wave polarization-spin locking (PSL), in two-dimensional (2D) altermagnets. This phenomenon arises from nontrivial Berry connections, resulting in perpendicular electronic polarizations in the spin-up and spin-down channels. Symmetry-protected -wave PSL occurs exclusively in -wave altermagnets with tetragonal layer groups.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
Discovering an efficient spintronic semiconductor workhorse with dual host capabilities as a channel and spin valve barrier remains one of the most elusive endeavors toward the development of spin-logic circuits. Graphene paved the way for two-dimensional (2D) materials, yet engineering a controlled band gap in it remains a challenge. Black phosphorus (BP) was recently unveiled as a potential candidate in the realm of 2D semiconductors, with carrier mobilities among the largest reported for a 2D material and a low spin-orbit coupling reminiscent of graphene.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Department of Physics and Astronomy, Uppsala University, SE-751 20 Uppsala, Sweden.
We report a robust half-metallic interface state in the CrI/2H-WTe van der Waals (vdW) heterostructure, exhibiting 100% spin polarization and an extraordinary magnetoresistance exceeding 1 × 10%. These unique properties position the CrI/2H-WTe configuration as an exceptional candidate for applications in data storage, spintronics, and spin caloritronics. By designing a device incorporating CrO electrodes, we model charge and spin transport in this heterostructure and analyze the thermal properties under parallel (PM) and antiparallel (APM) magnetization states.
View Article and Find Full Text PDFJ Chem Phys
August 2025
Department of Applied Physics and Materials Engineering, National Institute of Technology, Patna 800005, India.
This study exposes novel spin filtering phenomena in ultra-thin MoS2 films deposited on indium tin oxide (ITO) substrates. The novelty lies in the explicit dependence of spin polarization and filtering efficiency on the film thickness. MoS2, a transition metal dichalcogenide, exhibits promising spintronic properties due to its intrinsic spin-orbit coupling and the potential to control spin orientation.
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