Mobile intrinsic point defects for conductive neutral domain walls in LiNbO.

Conductive ferroelectric domain walls (DWs) hold great promise for neuromorphic nanoelectronics as they can contribute to realize multi-level diodes and nanoscale memristors. Point defects accumulating at DWs will change the local electrical transport properties. Hence, local, inter-switchable n- and p-type conductivity at DWs can be achieved through point defect population control. Here, we study the impact of point defects on the electronic structure at neutral domain walls in LiNbO by density functional theory (DFT). Segregation of Li and O vacancies was found to be energetically favourable at neutral DWs, implying that charge-compensating electrons or holes can give rise to n- or p-type conductivity. Changes in the electronic band gap and defect transition levels are discussed with respect to local property engineering, opening the pathway for reversible tuning between n- and p-type conduction at neutral ferroelectric DWs. Specifically, the high Curie temperature of LiNbO and the significant calculated mobility of O and Li vacancies suggest that thermal annealing and applied electric fields can be used experimentally to control point defect populations, and thus enable rewritable pn-junctions.