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The silicon nanowire field-effect transistor (SiNW FET) has been developed for over two decades as an ultrasensitive, label-free biosensor for biodetection. However, inconsistencies in manufacturing and surface functionalization at the nanoscale have led to poor sensor-to-sensor consistency in performance. Despite extensive efforts to address this issue through process improvements and calibration methods, the outcomes have not been satisfactory. Herein, based on the strong correlation between the saturation response of SiNW FET biosensors and both their feature size and surface functionalization, we propose a calibration strategy that combines the sensing principles of SiNW FET with the Langmuir-Freundlich model. By normalizing the response of the SiNW FET biosensors (Δ/) with their saturation response (Δ/), this strategy fundamentally overcomes the issues mentioned above. It has enabled label-free detection of nucleic acids, proteins, and exosomes within 5 min, achieving detection limits as low as attomoles and demonstrating a significant reduction in the coefficient of variation. Notably, the nucleic acid test results exhibit a strong correlation with the ultraviolet-visible (UV-vis) spectrophotometer measurements, with a correlation coefficient reaching 0.933. The proposed saturation response calibration strategy exhibits good universality and practicability in biological detection applications, providing theoretical and experimental support for the transition of mass-manufactured nanosensors from theoretical research to practical application.
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http://dx.doi.org/10.1021/acsnano.4c01937 | DOI Listing |
Talanta
December 2025
Department of Chemical and Materials Engineering, National Central University, Jhong-Li, 32001, Taiwan. Electronic address:
This study investigates optimal conditions for surface modification and ionic concentration of sensing buffers for miRNA-21 detection using DNA probes on silicon nanowire field-effect transistor (SiNW-FET) biosensors. Ionic strength is a key factor influencing DNA/RNA hybridization efficiency and FET detection sensitivity by affecting duplex formation and the Debye length. An optimal balance between these effects is crucial for ultra-sensitive miRNA detection.
View Article and Find Full Text PDFNanomicro Lett
February 2025
School of Electronic Science & Engineering, Nanjing University, Nanjing, 210093, People's Republic of China.
Gate-all-around field-effect transistors (GAA-FETs) represent the leading-edge channel architecture for constructing state-of-the-art high-performance FETs. Despite the advantages offered by the GAA configuration, its application to catalytic silicon nanowire (SiNW) channels, known for facile low-temperature fabrication and high yield, has faced challenges primarily due to issues with precise positioning and alignment. In exploring this promising avenue, we employed an in-plane solid-liquid-solid (IPSLS) growth technique to batch-fabricate orderly arrays of ultrathin SiNWs, with diameters of D = 22.
View Article and Find Full Text PDFSensors (Basel)
January 2025
Department of Computer Science, Faculty of Sciences and Humanities Sciences, Majmaah University, Al Majmaah 11952, Saudi Arabia.
Impedance-based biosensing has emerged as a critical technology for high-sensitivity biomolecular detection, yet traditional approaches often rely on bulky, costly impedance analyzers, limiting their portability and usability in point-of-care applications. Addressing these limitations, this paper proposes an advanced biosensing system integrating a Silicon Nanowire Field-Effect Transistor (SiNW-FET) biosensor with a high-gain amplification circuit and a 1D Convolutional Neural Network (CNN) implemented on FPGA hardware. This attempt combines SiNW-FET biosensing technology with FPGA-implemented deep learning noise reduction, creating a compact system capable of real-time viral detection with minimal computational latency.
View Article and Find Full Text PDFBiosens Bioelectron
January 2025
Department of Chemical and Materials Engineering, National Central University, Jhong-Li, 32001, Taiwan. Electronic address:
Ultra-low concentration nucleic acid detection is crucial for disease diagnosis and prognosis. Silicon nanowire field-effect transistors (SiNW FETs) are promising due to their sensitivity, real-time capabilities, and compact design. A critical consideration for FETs is the reaction time required for nucleic acid diffusion to the detection surface, especially at low concentrations.
View Article and Find Full Text PDFACS Sens
November 2024
School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, 210023 Nanjing, China.