98%
921
2 minutes
20
Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices, such as optomechanical crystals (OMCs), provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong for interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a line width of 13 kHz (-factor of ∼4.4 × 10) for a 6 GHz acoustic mode, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art line widths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path toward a coherent spin-phonon interface.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acs.nanolett.3c04953 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Key Laboratory of Advanced Reactor Engineering and Safety of Ministry of Education, Tsinghua University, Beijing 100084, China.
Silicon carbide (SiC) has attracted considerable interest for use in electronics, aerospace, and nuclear energy applications owing to its excellent electrical and mechanical properties. In the nuclear industry, SiC serves as an effective tritium permeation barrier. However, a significant discrepancy remains between the experimentally measured diffusion coefficients and the theoretical predictions.
View Article and Find Full Text PDFRSC Adv
August 2025
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh
The advent of graphene catalyzed extensive exploration into two-dimensional (2D) materials, owing to their extraordinary electronic, mechanical, and optical properties. Among these, two-dimensional silicon carbide (2D-SiC) has emerged as a compelling candidate for next-generation optoelectronic devices due to its inherent planar structure, robust mechanical strength, high exciton binding energy, high thermal stability, and wide band gap. In this work, we present a comprehensive first-principles investigation into the effects of intrinsic point defects including vacancies and antisites as well as substitutional doping with various single foreign atom (, As, Bi, Ga, Ge, In, P, Pb, Sb, Sn, Te, Ca, K, Mg) on the electronic and optical properties of 2D-SiC.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu 210093, China.
The nanoelectronic applications of current ferroelectrics have been greatly impeded by their incompatibility with silicon. In this paper, we propose a way to induce ferroelectricity in silicon dioxide (SiO), which is still the most widely used dielectric material in silicon-based chips. We show first-principles evidence that the intercalation of NH molecules into crystalline SiO is exothermic (Δ = -0.
View Article and Find Full Text PDFSmall
August 2025
Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, State Key Laboratory of Photovoltaic Materials and Cells, Nankai University, Tianjin, 300350, P. R. China.
Sputtered nickel oxide (NiO) is a promising material for hole transport layers (HTLs) in industrializing perovskite solar cells (PSCs) due to its scalable and conformal growth. However, its low conductivity and interfacial instability limit device performance. Herein, high-quality undoped NiO (DC-N) HTLs are developed fabricated via direct current (DC) reactive sputtering (Ni target) coupled with low-temperature (≤ 200 °C) air annealing.
View Article and Find Full Text PDFJ Colloid Interface Sci
August 2025
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China. Ele
Tin-based perovskite solar cells (TPSCs) have garnered considerable attention due to their favorable optoelectronic properties and environmental compatibility. However, during the fabrication of tin perovskite films, defects inevitably occur, inducing non-radiative recombination and accelerating film degradation. Here, we introduce a novel dual-site vacancy filling strategy by inducing the pyrrolidine hydroiodide (PyI) as an additive into the precursor.
View Article and Find Full Text PDF