The adsorption-diffusion model and biomimetic simulation reveal the switchable roles of silicon in regulating toxic metal uptake in rice roots.

Soil contamination by heavy metals has become a serious threat to global food security. The application of silicon (Si)-based materials is a simple and economical method for producing safe crops in contaminated soil. However, the impact of silicon on the heavy-metal concentration in plant roots, which are the first line in the chain of heavy-metal entering plants and causing stress and the main site of heavy-metal deposition in plants, remains puzzling. We proposed a process-based model (adsorption-diffusion model) to explain the results of a collection of 28 experiments on alleviating toxic metal stress in plants by Si. Then we evaluated the applicability of the model in Si-mitigated trivalent chromium (Cr[III]) stress in rice, taking into account variations in experimental conditions such as Cr(III) concentration, stress duration, and Si concentration. It was found that the adsorption-diffusion model fitted the experimental data well (R > 0.9). We also verified the binding interaction between Si and Cr in the cell wall using SEM-EDS and XPS. In addition, we designed a simplified biomimetic device that simulated the Si in cell wall to analyze the dual-action switch of Si from increasing Cr(III) adsorption to blocking Cr(III) diffusion. We found that the adsorption of Cr(III) by Si decreased from 58% to 7% as the total amount of Cr(III) increased, and finally the diffusion blocking effect of Si dominated. This study deepens our understanding of the role of Si in mitigating toxic metal stress in plants and is instructive for the research and use of Si-based materials to improve food security.