Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and High-Sensitivity NO Gas Sensing.

Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. To reduce power consumption, nanostructured MOX-based sensors that detect gas at low temperatures have been reported. However, the fabrication process of these sensors is difficult for mass production, and these sensors are lack uniformity and reliability. On the other hand, MOX film-based gas sensors have been commercialized but operate at high temperatures and exhibit low sensitivity. Herein, commercially advantageous highly sensitive, film-based indium oxide sensors operating at low temperatures are reported. Ar and O gases are simultaneously injected during the sputtering process to form a hydroxy-rich-surface InO film. Conventional indium oxide (InO) films (A0) and hydroxy-rich indium oxide films (A1) are compared using several analytical techniques. A1 exhibits a work function of 4.92 eV, larger than that of A0 (4.42 eV). A1 exhibits a Debye length 3.7 times longer than that of A0. A1 is advantageous for gas sensing when using field effect transistors (FETs) and resistors as transducers. Because of the hydroxy groups present on the surface of A1, A1 can react with NO gas at a lower temperature (∼100 °C) than A0 (180 °C). Operando diffuse reflectance infrared Fourier transform spectrometry (DRIFTS) shows that NO gas is adsorbed to A1 as nitrite (NO) at 100 °C and nitrite and nitrate (NO) at 200 °C. After NO is adsorbed as nitrate, the sensitivity of the A1 sensor decreases and its low-temperature operability is compromised. On the other hand, when NO is adsorbed only as nitrite, the performance of the sensor is maintained. The reliable hydroxy-rich FET-type gas sensor shows the best performance compared to that of the existing film-based NO gas sensors, with a 2460% response to 500 ppb NO gas at a power consumption of 1.03 mW.