Electrical performance of monolayer MoStransistor with MoSnanobelt metallic edges as electrodes.

The contact electrodes have great influence on the performance of monolayer MoSdevices. In this paper, monolayer MoSand MoSnanobelts were synthesized on SiO/Si substrates via the chemical vapor deposition method. By using wet and dry transfer process, MoSnanobelt metallic edges were designed as the source/drain contact electrodes of monolayer MoSfield effect transistor. The 'nanobelt metallic edges' refers to the top surface of the nanobelt being metallic. Because the base planes of MoSnanobelt vertically stand on the substrate, which makes the layer edges form the top surface of the nanobelt. The nonlinear-characteristics of the device indicates that the contact between the monolayer MoSand MoSmetallic edges displays a Schottky-like behavior. The back-gated transfer characteristics indicate that monolayer MoSdevice with MoSnanobelt metallic edges as electrodes shows an n-type behavior with a mobility of ∼0.44 cmV·s, a carrier concentration of ∼7.31 × 10cm, and an on/off ratio of ∼10. The results enrich the electrode materials of two-dimensional material devices and exhibit potential for future application of MoSmetallic edges in electronic devices.