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High-quality, uniaxially oriented, and flexible PbZrTiO (PZT) films were fabricated on flexible RbLaNbO/BaTiO (RLNO/BTO)-coated polyimide (PI) substrates. All layers were fabricated by a photo-assisted chemical solution deposition (PCSD) process using KrF laser irradiation for photocrystallization of the printed precursors. The Dion-Jacobson perovskite RLNO thin films on flexible PI sheets were employed as seed layers for the uniaxially oriented growth of PZT films. To obtain the uniaxially oriented RLNO seed layer, a BTO nanoparticle-dispersion interlayer was fabricated to avoid PI substrate surface damage under excess photothermal heating, and the RLNO has been orientedly grown only at around 40 mJ·cm at 300 °C. The prepared RLNO seed layer on the BTO/PI substrate showed very high (010)-oriented growth with a very high Lotgering factor ((010) = 1.0). By using the flexible (010)-oriented RLNO film on BTO/PI, PZT film crystal growth was possible via KrF laser irradiation of a sol-gel-derived precursor film at 50 mJ·cm at 300 °C. The obtained PZT film showed highly (001)-oriented growth on the flexible plastic substrates with (001) = 0.92 without any micro-cracks. The RLNO was only uniaxial-oriented grown at the top part of the RLNO amorphous precursor layer. The oriented grown and amorphous phases of RLNO would have two important roles for this multilayered film formation: (1) triggering orientation growth of the PZT film at the top and (2) the stress relaxation of the underneath BTO layer to suppress the micro-crack formation. This is the first time that PZT films have been crystallized directly on flexible substrates. The combined processes of photocrystallization and chemical solution deposition are a cost-effective and highly on-demand process for the fabrication of flexible devices.
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http://dx.doi.org/10.3390/ma16052116 | DOI Listing |
Micromachines (Basel)
July 2025
Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO and SrTiO (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO/PZT, and Ti/TiO/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P-E loop analysis evaluated crystallinity, piezoelectric coefficient d, and polarization behavior.
View Article and Find Full Text PDFSci Rep
August 2025
Center for Dielectrics and Piezoelectrics, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA.
This study elucidates the roles of strain gradients in enhancing both electronic and ionic conductivity of Nb doped lead zirconate titanate (PNZT) films. Increasing the applied strain in bent PNZT films from 0 to 0.5% reduced the energy barrier for vacancy diffusion from 0.
View Article and Find Full Text PDFACS Omega
July 2025
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)-force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO, as an end member of the PZT, ()-PbZr Ti O, solid solution, has been the subject of many studies. However, processing of perovskite PbZrO is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization.
View Article and Find Full Text PDFSensors (Basel)
June 2025
Department of Electrical and Electronics Engineering, Ataturk University, 25240 Erzurum, Türkiye.
This study presents the successful fabrication of lead zirconate titanate (PZT) thin films on silicon (Si) substrates using a hybrid deposition method combining spin-coating and RF sputtering techniques. Initially, a PZT layer was deposited through four successive spin-coating cycles, followed by an additional layer formed via RF sputtering. The resulting multilayer structure was annealed at 700 °C for 2 h to improve crystallinity.
View Article and Find Full Text PDFNanomaterials (Basel)
May 2025
Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
Ferroelectric thin films with a high dielectric tunability () have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau-Devonshire type thermodynamic potential, we show that the dielectric tunability of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(ZrTi)O (PZT) film.
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