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Frequency-dependent intensity correlation function measurements can be employed to determine the optical turbidity of solid disordered dielectrics. Here we demonstrate a speckle frequency correlation experiment with a focused beam and using an area detector. We show how to apply frequency correlation measurements to optically thin solid samples with the aim of determining the light diffusion coefficient and transport mean free path ℓ*. To give a practical example, we extract the optical transport mean free path of PTFE (Teflon) slabs, with a thickness of L = 0.4-3.5 mm, covering optical densities L/ℓ* ∼ 4-15.
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http://dx.doi.org/10.1364/OL.449084 | DOI Listing |
Light Sci Appl
September 2025
Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan.
While non-destructive in-line monitoring at manufacturing sites is essential for safe distribution cycles of pharmaceuticals, efforts are still insufficient to develop analytical systems for detailed dynamic visualisation of foreign substances and material composition in target pills. Although spectroscopies, expected towards pharma testing, have faced technical challenges in in-line setups for bulky equipment housing, this work demonstrates compact dynamic photo-monitoring systems by selectively extracting informative irradiation-wavelengths from comprehensive optical references of target pills. This work develops a non-destructive in-line dynamic inspection system for pharma agent pills with carbon nanotube (CNT) photo-thermoelectric imagers and the associated ultrabroadband sub-terahertz (THz)-infrared (IR) multi-wavelength monitoring.
View Article and Find Full Text PDFPhys Rev Lett
August 2025
University of Konstanz, Department of Physics and Center for Applied Photonics, D-78457 Konstanz, Germany.
Femtosecond laser excitation of nanometer thin heterostructures comprising a heavy metal and a magnetically ordered material is known to result in the emission of terahertz radiation. However, the nature of the emitted radiation from heavy metal/antiferromagnet heterostructures has sparked debates and controversies in the literature. Here, we unambiguously separate spin and charge contributions from Pt/NiO heterostructures by introducing an unprecedented methodology combining high external magnetic fields with a symmetry analysis of the emitted terahertz polarization.
View Article and Find Full Text PDFJ Am Chem Soc
September 2025
Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States.
Coherent electron spin states within paramagnetic molecules hold significant potential for microscopic quantum sensing. However, all-optical coherence measurements amenable to high spatial and temporal resolution under ambient conditions remain a significant challenge. Here we conduct room-temperature, picosecond time-resolved Faraday ellipticity/rotation (TRFE/R) measurements of the electron spin decoherence time in [IrBr].
View Article and Find Full Text PDFSmall
September 2025
Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physic
Antimony selenide (SbSe), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap. To extend detection into the near-infrared (NIR, 700-1350 nm), Bi-alloyed (BiSb)Se is developed via vacuum sputtering and postselenization.
View Article and Find Full Text PDFNanoscale
September 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.
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