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Article Abstract
A new design strategy through the synergy of Mo(vi)-Mo(v) intervalence charge transfer and π(radical)-π(radical/cation) interactions is proposed to obtain semiconductors with photoresponsive ranges covering the whole UV-SWIR (ultraviolet-shortwave near-infrared; ca. 250-3000 nm) region. With this strategy, a viologen-based molybdate semiconductor with a UV-SWIR photoresponsive range was obtained through UV/X-ray irradiation or thermal annealing. The thermally annealed semiconductor has the highest conversion and the best photocurrent response in the range of 355-2400 nm.
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UV-vis/X-ray/thermo-induced synthesis and UV-SWIR photoresponsive property of a mixed-valence viologen molybdate semiconductor.
Chem Commun (Camb)
June 2021
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China.
A new design strategy through the synergy of Mo(vi)-Mo(v) intervalence charge transfer and π(radical)-π(radical/cation) interactions is proposed to obtain semiconductors with photoresponsive ranges covering the whole UV-SWIR (ultraviolet-shortwave near-infrared; ca. 250-3000 nm) region. With this strategy, a viologen-based molybdate semiconductor with a UV-SWIR photoresponsive range was obtained through UV/X-ray irradiation or thermal annealing.
View Article and Find Full Text PDFDirected self-assembly of viologen-based 2D semiconductors with intrinsic UV-SWIR photoresponse after photo/thermo activation.
Nat Commun
March 2020
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, 350002, Fuzhou, Fujian, China.
Extending photoresponse ranges of semiconductors to the entire ultraviolet-visible (UV)-shortwave near-infrared (SWIR) region (ca. 200-3000 nm) is highly desirable to reduce complexity and cost of photodetectors or to promote power conversion efficiency of solar cells. The observed up limit of photoresponse for organic-based semiconductors is about 1800 nm, far from covering the UV-SWIR region.
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