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The d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO/LaTiO heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO to LaCoO. This triggers destabilisation of the CoO octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO. Tuned by the thickness of LaTiO, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.
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http://dx.doi.org/10.1038/s41467-021-22790-0 | DOI Listing |
J Chem Phys
May 2025
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Information Photonic Technique, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
In semiconductor-based microlasers, the lasing performance and device properties are closely related to the behavior of the excited carriers. Comprehending their laser mechanisms and controlling laser behavior on ultrafast timescales is crucial. This paper employs a microscopic optical Kerr-gate method to investigate the lasing dynamic in a composite perovskite micro/nanostructure.
View Article and Find Full Text PDFNano Lett
March 2025
College of Physics, Weihai Innovation Research Institute, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, China.
Ferromagnetic metals, distinguished by high Curie temperatures and magnetization, are crucial in voltage-controlled magnetism for potential room-temperature applications in low-power multifunctional devices. Despite numerous attempts based on various mechanisms, achieving ideal magnetic modulation in metals remains challenging. This work proposes a new mechanism to control bulk metal magnetism by modulating valence electron filling in spin-polarized bands, leveraging the Slater-Pauling rule in alloys.
View Article and Find Full Text PDFSci Technol Adv Mater
October 2024
RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
Topological materials attract a considerable research interest because of their characteristic band structure giving rise to various new phenomena in quantum physics. Besides this, they are tempting from a functional materials point of view: Topological materials bear potential for an enhanced thermoelectric efficiency because they possess the required ingredients, such as intermediate carrier concentrations, large mobilities, heavy elements etc. Against this background, this work reports an enhanced thermoelectric performance of the topological Dirac semimetal CdAs upon alloying the trivial semiconductor ZnAs.
View Article and Find Full Text PDFNanophotonics
May 2024
ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronics Materials Engineering, Research School of Physics, Australian National University, Canberra, ACT 2600, Australia.
All-optical tunability of semiconductor metasurfaces offers unique opportunities for novel time-varying effects, including frequency conversion and light trapping. However, the all-optical processes often induce optical absorption that fundamentally limits the possible dynamic increase of their quality factor (Q-boosting). Here, we propose and numerically demonstrate the concept of large Q-boosting in a single-material metasurface by dynamically reducing its structural anisotropy on a femtosecond timescale.
View Article and Find Full Text PDFIn this study, we explored the size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs grown on Si substrates. We successfully demonstrated the fabrication of 4-inch wafer-scale InGaN/GaN micro-LEDs, showcasing the feasibility of large-scale production. Additionally, we presented the binary pixel display with 6 µm pitch, achieving a resolution of 4232 PPI.
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