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We report a dual gate/common channel organic transistor architecture designed for quantifying the concentration of one of the strands of miRNA-21 in solution. The device allows one to measure the differential response between two gate electrodes, viz. one sensing and one reference, both immersed in the electrolyte above the transistor channel. Hybridization with oligonucleotide in the picomolar regime induces a sizable reduction of the current flowing through the transistor channel. The device signal is reported at various gate voltages, showing maximum sensitivity in the sublinear regime, with a limit of detection as low as 35 pM. We describe the dose curves with an analytical function derived from a thermodynamic model of the reaction equilibria relevant in our experiment and device configuration, and we show that the apparent Hill dependence on analyte concentration, whose exponent lies between 0.5 and 1, emerges from the interplay of the different equilibria. The binding free energy characteristic of the hybridization on the device surface is found to be approximately 20% lower with respect to the reaction in solution, hinting to partially inhibiting effect of the surface and presence of competing reactions. Impedance spectroscopy and surface plasmon resonance (SPR) performed on the same oligonucleotide pair were correlated to the electronic current transduced by the EGOFET, and confirmed the selectivity of the biorecognition probe covalently bound on the gold surface.
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http://dx.doi.org/10.1016/j.bios.2021.113144 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS, Novosibirsk 630090, Russia.
While fluorene-containing materials are widely used in organic optoelectronics as bright emitters and hole semiconductors, their diazafluorene analogues have been poorly explored, though their nitrogen atoms could result in electron transport and bring sensory abilities. Here, we report the synthesis, characterization, and detailed study of a series of 4,5-diazafluorene-derivatives with different donor/acceptor substituents and organic semiconductors based on these molecules. The crystal structures of all the materials were solved by X-ray diffraction, indicating the presence of extensive π-stacking and anisotropic charge-transfer pathways.
View Article and Find Full Text PDFZhongguo Zhong Yao Za Zhi
July 2025
School of Pharmacy,Fujian University of Traditional Chinese Medicine Fuzhou 350122,China School of Chinese Materia Medica, Beijing University of Chinese Medicine Beijing 102488, China Engineering Research Center of Chinese Medicine Production and New Drug Development, Ministry of Education Beijing 1
The quality of traditional Chinese medicine(TCM) is a critical foundation for ensuring the stability of its efficacy, as well as the safety and effectiveness of its clinical use. The identification of critical quality attributes(CQAs) is one of the core components of TCM preparation quality control. This study focuses on Jianwei Xiaoshi Tablets and explores their CQAs related to property and flavor from the perspective of taste receptor proteins.
View Article and Find Full Text PDFSmall
September 2025
Department of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.
2D materials have emerged as promising candidates for next-generation field-effect transistors (FETs) owing to the atomically thin geometry and excellent electrostatic gate control. Here, double-gate vertical sidewall FETs based on chemical vapor deposition-grown monolayer WS are demonstrated and, for the first time, report vertical multi-channel nanosheet FETs (NSFETs). By implementing a dual-step sidewall profile, steep SiO surfaces are obtained, which enabled seamless WS adhesion and contributed to enhanced device yield.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
From display-driving transistors to biosensors, semiconducting carbon nanotube (CNT) thin films have many potential use cases. While recent advances in solution-processable CNTs have made them more attainable, the performance of CNT thin-film devices is often limited by variability and resistance at the contact interfaces. In this work, we used statistical distributions of key performance metrics from CNT thin-film transistors (TFTs) to gain insights into: (1) the influence of different contact geometries; (2) the impact of scaling toward submicron dimensions; and (3) the uniformity of nanotube networks deposited by a facile dip-coating technique.
View Article and Find Full Text PDFNanotechnology
August 2025
Electrical and Computer Engineering, University of Sao Paulo Sao Carlos School of Engineering, Caixa Postal 359, CEP: 13560-590, Sao Carlos- SP, São Carlos, SP, 13566-590, BRAZIL.
This review addresses the compact modelling strategies for field-effect transistors based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modelling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic.
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