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Molybdenum disulfide (MoS ) and related transition metal chalcogenides can replace expensive precious metal catalysts such as Pt for the hydrogen evolution reaction (HER). The relations between the nanoscale properties and HER activity of well-controlled 2H and Li-promoted 1T phases of MoS , as well as an amorphous MoS phase, have been investigated and a detailed comparison is made on Mo-S and Mo-Mo bond analysis under operando HER conditions, which reveals a similar bond structure in 1T and amorphous MoS phases as a key feature in explaining their increased HER activity. Whereas the distinct bond structure in 1T phase MoS is caused by Li intercalation and disappears under harsh HER conditions, amorphous MoS maintains its intrinsic short Mo-Mo bond feature and, with that, its high HER activity. Quantum-chemical calculations indicate similar electronic structures of small MoS clusters serving as models for amorphous MoS and the 1T phase MoS , showing similar Gibbs free energies for hydrogen adsorption (ΔG ) and metallic character.
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http://dx.doi.org/10.1002/cssc.201901811 | DOI Listing |
Inorg Chem
September 2025
Department of Applied Chemistry, Graduate School of Engineering, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-853, Japan.
Amorphous molybdenum polysulfides (a-MoS) have attracted considerable attention because of their unique physical and chemical properties, which enable their use in a wide range of applications including energy-storage materials. Among various synthesis methods, thermal decomposition provides an effective route for synthesizing a-MoS. In particular, amorphous molybdenum trisulfide (a-MoS) prepared via thermal decomposition has emerged as a promising active material for energy-storage applications owing to its unique structural and electrochemical characteristics.
View Article and Find Full Text PDFSmall
September 2025
Department of Materials Science, Key Laboratory of Automobile Materials, MOE and State Key Laboratory of High Pressure and Superhard Materials, International Center of Future Science, Jilin University, Changchun, 130012, China.
Molybdenum disulfide (MoS) exhibits excellent lubrication capacity rooted in its layered structure, but it suffers significant structural and functional deterioration due to oxidation in ambient environments, limiting its applications. Concerted efforts are focused on enhancing the antioxidation ability of MoS, but challenges remain. This work conceptualizes and demonstrates a contrarian design of MoS-based film via metal incorporation and oxidation based on consideration of key fundamental principles of thermodynamics, chemistry, and physical mechanics.
View Article and Find Full Text PDFNanomaterials (Basel)
August 2025
National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS (roughness: 0.
View Article and Find Full Text PDFAdv Electron Mater
June 2025
Holonyak Micro and Nanotechnology Laboratory, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States.
Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field-effect transistors (FETs) in complementary metal-oxide-semiconductor (CMOS) technology. 2D semiconductors, such as MoS and WSe, are promising channel materials for beyond-silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material.
View Article and Find Full Text PDFJ Colloid Interface Sci
December 2025
School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea. Electronic address:
Rational design and synthesis of robust and reversible anode materials are critical for sodium-ion storage; however, further development remains hindered by sluggish kinetics, volume expansion, and unsatisfactory cycling stability. To address these issues, precise structural optimization and interface modulation are highly desirable. Herein, a hierarchical hollow crystalline-amorphous CoS-MoS heterojunction coated with N-doped carbon (CoS-MoS@NC) is designed and prepared via facile reduction/oxidation reactions, polydopamine coating, and sulfurization processes.
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