Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 197
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 197
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 271
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 1075
Function: getPubMedXML
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3195
Function: GetPubMedArticleOutput_2016
File: /var/www/html/application/controllers/Detail.php
Line: 597
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 511
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 317
Function: require_once
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The fabrication of thin oxide films at low temperatures using simple processes has been a significant challenge associated with expanding the potential applications of these materials. Recent developments have demonstrated that the photo-assisted chemical solution deposition (PACSD) process offers a promising means of solving these difficulties, allowing high volume, on-demand production of variable sample sizes using an advantageous wet process. A better understanding of the crystal growth phenomena associated with this process, however, is required to enable various oxide thin films to be prepared using this new concept. Under pulsed ultraviolet (UV) laser irradiation, crystal growth has been confirmed to proceed by near-instantaneous photothermal heating and photochemical effects at the reaction interface. Vacuum UV lamp irradiation is also a useful means of generating oxide nuclei, since it results in effective chemical bond cleavage and simultaneously produces reactive oxidant (O3/O((1)D)) species. In this review, the nucleation and growth mechanisms which occur during the PACSD process are introduced and discussed and we examine the future possible applications of this process.
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http://dx.doi.org/10.1039/c3cs60222b | DOI Listing |