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In this Letter we report a comparative study, in the infrared regime, of surface plasmon polariton (SPP) propagation in epitaxially grown Ag films and in polycrystalline Ag films, all grown on Si substrates. Plasmonic resonance features are analyzed using extraordinary optical transmission (EOT) measurements, and SPP band structures for the two dielectric/metal interfaces are investigated for both types of film. At the Si/Ag interface, EOT spectra show almost identical features for epitaxial and polycrystalline Ag films and are characterized by sharp Fano resonances. On the contrary, at the air/Ag interface, dramatic differences are observed: while the epitaxial film continues to exhibit sharp Fano resonances, the polycrystalline film shows only broad spectral features and much lower transmission intensities. In corroboration with theoretical simulations, we find that surface roughness plays a critical role in SPP propagation for this wavelength range.
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http://dx.doi.org/10.1021/nl303029s | DOI Listing |
Adv Mater
September 2025
College of Integrated Circuits & Micro-Nano Electronics, Fudan University, Shanghai, 200433, China.
High-operating-temperature (HOT) mid-wavelength and long-wavelength infrared photodetectors have emerged as critical enablers for eliminating bulky cryogenic cooling systems, offering transfromative potential in developing compact, energy-efficient infrared technologies with reduced size, weight, power, and cost. Focusing on infrared photodiodes, this review first discusses the fundamental mechanisms limiting performance at elevated operating temperatures. Subsequently, the progress in conventional epitaxial semiconductors, such as HgCdTe, InAsSb, and III-V type-II superlattice is reviewed, highlighting the evolution of device architectures designed to effectively suppress dark currents and approach background-limited performance.
View Article and Find Full Text PDFNanoscale Adv
August 2025
Department of Metallurgical and Materials Engineering, Faculty of Engineering, University of Dokuz Eylül İzmir Turkey.
Thin films of CuSn Gd S were prepared on soda-lime glass substrates using spin coating in a sulfur-rich environment. We investigated how doping CuSnS with gadolinium (Gd) affected its structural, morphological, and optical properties using X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), and UV-Vis spectroscopy. XRD showed that all samples had a polycrystalline monoclinic structure, while FE-SEM revealed a mix of spherical and polygon-shaped grains.
View Article and Find Full Text PDFPhys Chem Chem Phys
September 2025
Department of Electrical and Electronics Engineering, Koç University, Sariyer, Istanbul 34450, Turkey.
Skyrmion-based devices promise energy-efficient spintronic functionalities, but polycrystalline magnetic films can degrade performance by inducing skyrmion pinning. Here, we use micromagnetic modeling to quantify the impact of polycrystallinity-induced variability in key material parameters such as saturation magnetization, Dzyaloshinskii-Moriya interaction, and uniaxial anisotropy on skyrmion stability, dynamics, and hysteresis loops in Co/Pt films and device geometries. We demonstrate that variations exceeding 5% in these parameters across grains significantly increase the likelihood of pinning, with the effects depending on both grain size and distribution.
View Article and Find Full Text PDFNat Commun
August 2025
The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xi'an, China.
The self-heating effect in wide bandgap semiconductor devices makes epitaxial GaO on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application. This study presents van der Waals β-GaO (VdW-β-GaO) grown on high-thermal-conductivity polycrystalline diamond.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
Department of Inorganic Compounds Chemistry, N. I. Lobachevsky State University, 603950 Nizhny Novgorod, Russia.
A method was developed for plasma-enhanced chemical vapor deposition of β-GaO:Zn thin films with the possibility of pre-purifying precursors. The structural and electrically conductive properties of β-GaO:Zn thin films were studied. Increasing the temperature of the Zn source () to 220 °C led to the formation of GaO films with a Zn concentration of 4 at.
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