High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire. | LitMetric

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High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire. | LitMetric

High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire.

Youqiang Chen , Xinni Zhang , Qing Zhao , Li He , Zhipeng Xie , Huatao Wang

Chem Commun (Camb)

College of Physics Science, Qingdao University, Qingdao, 266071, P. R. China.

Published: June 2012

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For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.

Download full-text PDF	Source
http://dx.doi.org/10.1039/c2cc30583f	DOI Listing

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