Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology.

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Institut d'Electronique Microélectronique et Nanotechnologie, CNRS, Univ. of Lille, Avenue Poincaré, 59652, Villeneuve d'Ascq, France.

Published: September 2011


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Article Abstract

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO(2) layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic-resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive X-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. The extended uniform array of nanodots is used as a new test-bed for molecular electronic devices.

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http://dx.doi.org/10.1002/smll.201100915DOI Listing

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Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology.

Small

September 2011

Institut d'Electronique Microélectronique et Nanotechnologie, CNRS, Univ. of Lille, Avenue Poincaré, 59652, Villeneuve d'Ascq, France.

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO(2) layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic-resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive X-ray spectroscopy.

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