Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors.

High-k metal oxides are gradually replacing the traditional SiO dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)O with the best dielectric properties, exhibiting a low leakage current of 1.

Concise syntheses of trifluoromethylated cyclic and acyclic analogues of cADPR.

A novel trifluoromethylated analogue of cADPR, 8-CF3-cIDPDE (5) was designed and synthesized via construction of N1,N9-disubstituted hypoxanthine, trifluoromethylation and intramolecular condensation. A series of acyclic analogues of cADPR were also designed and synthesized. These compounds could be useful molecules for studying the structure-activity relationship of cADPR analogues and exploring the cADPR/RyR Ca2+ signalling system.

Trifluoromethylated cyclic-ADP-ribose mimic: synthesis of 8-trifluoromethyl-N(1)-[(5''-O-phosphorylethoxy)methyl]-5'-O-phosphorylinosine-5',5''-cyclic pyrophosphate (8-CF(3)-cIDPRE) and its calcium release activity in T cells.

A convenient trifluoromethylation method was firstly applied to the synthesis of 8- CF(3)-purine nucleosides. On the basis of this method, new protection and deprotection strategies were developed for the successful synthesis of the trifluoromethylated cyclic-ADP-ribose mimic, 8-CF(3)-cIDPRE 1. Using intact, fura-2-loaded Jurkat T cells compound 1 and 2',3'-O-isopropylidene 8-CF(3)-cIDPRE 14 were characterized as membrane-permeant cADPR agonists.