Publications by authors named "Tzu-Neng Lin"

Transition metal dichalcogenides (TMDCs) have recently attracted a tremendous amount of attention owing to their superior optical and electrical properties as well as the interesting and various nanostructures that are created by different synthesis processes. However, the atomic thickness of TMDCs limits the light absorption and results in the weak performance of optoelectronic devices, such as photodetectors. Here, we demonstrate the approach to increase the surface area of TMDCs by a one-step synthesis process of TMDC nanowalls from WO into three-dimensional (3D) WS nanowalls.

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MoS quantum dots (QDs)-based white-light-emitting diodes (QD-WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine-doped MoS QDs synthesized by microwave induced fragmentation of 2D MoS nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation-wavelength-dependent emission properties. Notably, the histidine-doped MoS QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS QDs.

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A luminescent solar concentrator (LSC) is composed of loaded luminophores and a waveguide that can be employed to harvest and concentrate both direct and diffused sunlight for promising applications in solar windows. Thus far, most of efficient LSCs still relied on the heavy-metal-containing colloidal quantum dots (CQDs) dispersed into a polymer matrix with a very low loading (typically <1 wt %). Such low-loading constraint is required to mitigate the concentration-induced quenching (CIQ) and maintain high optical quality and film uniformity, but this would strongly reduce the light-absorbing efficiency.

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We propose a tunnel-injection structure, in which WS quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS-QD injector to the InGaN-QW emitter.

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We have developed a facile, fast, and one-step synthetic method to prepare graphene quantum dots (GQDs) simultaneously with nitrogen (N) doping via pulsed laser ablation. The N-doped GQDs (N-GQDs) with an average size around 3 nm and an N/C atomic ratio of 33% have been obtained. The N-GQDs emit blue photoluminescence (PL), where the PL intensity enhances as the N doping increases.

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Article Synopsis
  • Graphene quantum dots (GQDs) with an average size of 3.5 nm were created using pulsed laser ablation and used to enhance UV LEDs.
  • The addition of GQDs led to a significant boost in electroluminescence and reduced series resistance in the LEDs, with optimal effects observed at a GQD concentration of 0.9 mg/ml, resulting in a 71% increase in light output power.
  • The improvements are attributed to better photon recycling and efficient carrier transfer from GQDs to the active layer of the LEDs.
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Article Synopsis
  • The study presents a cost-effective three-step method for producing graphene nano-flakes from carbon nanotubes, involving pressing, homogenization, and sonication exfoliation.
  • Various characterization techniques, including SEM, TEM, and PL measurements, show that the resulting GNFs have an approximate size of 40-50 nm.
  • First principles calculations were conducted to explore the transformation process of CNTs to GNFs, focusing on how different shapes and sizes impact edge formation energies.
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Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly.

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Compared with most mature cadmium-containing quantum dots (QDs), carbon nanodots (CNDs) are a new class of colloidal nanomaterials that exhibit unique photoluminescence (PL) properties while being nontoxic and easily manufactured using low-cost precursor materials. However, solid-state CNDs exhibit poor PL quantum yields (PL-QYs) and inefficient radiative transition, which significantly hinders their practical use in optoelectronic devices. To address this issue, plasmonic nanoantennas consisting of Au nanorods (Au-NRs) deposited on a flat Au film with inserted dielectric layers were used to enhance the spontaneous emission of solid-state CNDs with broad spectral linewidth.

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Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents.

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