High-Performance Piezoelectric Micro Diaphragm Hydrogen Sensor.

Highly sensitive, selective, and compact hydrogen (H) sensors for safety and process monitoring are needed due to the growing adoption of H as a clean energy carrier. Current resonant frequency-based H sensors face a critical challenge in simultaneously achieving high sensitivity, low operating frequency, and miniaturization while maintaining a high figure of merit (FOM). This study addresses these challenges by introducing a novel piezoelectric micro diagram (PMD) H sensor that achieves an unprecedented FOM exceeding 10.

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing.

Aluminum Scandium Nitride (AlScN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation-based polarization switching mechanism in AlScN (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.

Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors.

Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal-oxide-semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities.

Controlling Resistive Switching by Using an Optimized MoS Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO -Based RRAM.

Controlled resistive switching by using an optimized 2 nm thick MoS interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO -based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrO /AlO/TaO /MoS/TiN structure. The pristine device including the IrO TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.

Scalable cross-point resistive switching memory and mechanism through an understanding of HO/glucose sensing using an IrO/AlO/W structure.

The resistive switching characteristics of a scalable IrO/AlO/W cross-point structure and its mechanism for pH/HO sensing along with glucose detection have been investigated for the first time. Porous IrO and Ir/Ir oxidation states are observed via high-resolution transmission electron microscope, field-emission scanning electron spectroscopy, and X-ray photo-electron spectroscopy. The 20 nm-thick IrO devices in sidewall contact show consecutive long dc cycles at a low current compliance (CC) of 10 μA, multi-level operation with CC varying from 10 μA to 100 μA, and long program/erase endurance of >10 cycles with 100 ns pulse width.

Understanding of multi-level resistive switching mechanism in GeO through redox reaction in HO/sarcosine prostate cancer biomarker detection.

Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO film in a simple W/GeO/W structure and understanding of switching mechanism through redox reaction in HO/sarcosine sensing (or changing Ge°/Ge oxidation states under external bias) have been reported for the first time. Oxidation states of Ge/Ge are confirmed by both XPS and HO sensing of GeO membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.

Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO3/WOx layer in a device with a size of 150 × 150 nm(2). The composition of WO3/WOx is confirmed by X-ray photo-electron spectroscopy.

RRAM characteristics using a new Cr/GdOx/TiN structure.

Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study.

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO /TiO /TiN Structure.

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO /TiO /TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm.

Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.

Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operation of ±2.