Pressure-dependent current transport in vertical BP/MoS heterostructures.

van der Waals heterostructures between two-dimensional (2D) materials offer versatile platforms for innovative electrical device architectures and applications. Black phosphorus (BP) and molybdenum disulfide (MoS) emerge as promising candidates for heterostructures, owing to their exceptional electronic properties and gate-tunable capabilities. In this work, we study the electrical properties of a vertical BP/MoS heterostructure fabricated onto a SiO/Si substrate in a back-gate configuration.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm V s and a memory window up to 1.3 μA.

Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation.

Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS lattice or in the underlying substrate. We fabricated MoS field-effect transistors on SiO/Si substrates, irradiated these devices with Xe ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties.

Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by DFT calculations.

With the study of Janus monolayer transition metal dichalcogenides, in which one of the two chalcogen layers is replaced by another type of chalcogen atom, research on two-dimensional materials is advancing into new areas. Yet only little is known about this new kind of material class, mainly due to the difficult synthesis. In this work, we synthesize MoSSe monolayers from exfoliated samples and compare their Raman signatures with density functional theory calculations of phonon modes that depend in a nontrivial way on doping and strain.

Structural Insights into Hysteretic Spin-Crossover in a Set of Iron(II)-2,6-bis(1H-Pyrazol-1-yl)Pyridine) Complexes.

Bistable spin-crossover (SCO) complexes that undergo abrupt and hysteretic (ΔT ) spin-state switching are desirable for molecule-based switching and memory applications. In this study, we report on structural facets governing hysteretic SCO in a set of iron(II)-2,6-bis(1H-pyrazol-1-yl)pyridine) (bpp) complexes - [Fe(bpp-COOEt) ](X) ⋅CH NO (X=ClO , 1; X=BF , 2). Stable spin-state switching - T =288 K; ΔT =62 K - is observed for 1, whereas 2 undergoes above-room-temperature lattice-solvent content-dependent SCO - T =331 K; ΔT =43 K.

Large-Area, Two-Dimensional MoS Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor Interface.

Two-dimensional semiconductors such as MoS are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics.

Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin molecules.

During the last decade graphene-enhanced Raman spectroscopy has proven to be a powerful tool to detect and analyze minute amounts of molecules adsorbed on graphene. By using a graphene-based field-effect device the unique opportunity arises to gain a deeper insight into the coupling of molecules and graphene as graphene's Fermi level can be controlled by the transistor`s gate voltage. However, the fabrication of such a device comes with great challenges because of contaminations stemming from processing the device inevitably prevent direct adsorption of the molecules onto graphene rendering it unsuitable for field-effect controlled graphene-enhanced Raman spectroscopy measurements/experiments.

Electron Irradiation of Metal Contacts in Monolayer MoS Field-Effect Transistors.

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance.