Reconfigurable Inverter Based on Ferroelectric-Gating MoS Field-Effect Transistors toward In-Memory Logic Operations.

With the advancement of information technology in contemporary society, there is an increasing demand for the rapid processing of large amounts of data. Concurrently, traditional silicon-based integrated circuits have reached their performance limits due to the exacerbation of non-ideal effects. This necessitates further multifunctionalities and miniaturization of modern integrated circuits.