All-electrical perpendicular switching of chiral antiferromagnetic order.

Antiferromagnets as active components in devices have been attracting attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and fast memory devices. Although the switching of antiferromagnetic (AFM) order by current-induced spin-orbit torque (SOT) has already been realized, field-free SOT-induced bidirectional switching of AFM order in perpendicular geometry has been elusive. Here we experimentally demonstrate field-free perpendicular switching of the magnetic octupole m in chiral AFM MnSn by combining in-plane and out-of-plane SOTs generated by two-dimensional van der Vaals WTe.

Crystal Symmetry-Dependent In-Plane Hall Effect.

The Hall effect has played a vital role in unraveling the intricate properties of electron transport in solid materials. Here, we report on a crystal symmetry-dependent in-plane Hall effect (CIHE) observed in a CuPt/CoPt ferromagnetic heterostructure. Unlike the planar Hall effect (PHE), the CIHE in CuPt/CoPt strongly depends on the current flowing direction (ϕ) with respect to the crystal structure.