ACS Appl Mater Interfaces
February 2025
The effect of growth temperature and subsequent annealing on the epitaxy of both single- and few-layer TaSe on Se-terminated GaP(111) substrates is investigated. The selective growth of the 1T and 1H phases is shown up to 1 ML according to X-ray and ultraviolet photoelectron spectroscopies. The 1H monolayer, favored at low temperatures, exhibits a very homogeneous coverage after annealing, while the 1T ML, grown at high temperatures, is characterized by a better in-plane orientation.
View Article and Find Full Text PDFNanomaterials (Basel)
March 2022
Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It's easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and stability are needed.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2020
Despite the wealth of tunneling spectroscopic studies performed on silicene and germanene, the observation of a well-defined Dirac cone in these materials remains elusive. Here, we study germanene grown on Al(1 1 1) at submonolayer coverages with low temperature scanning tunneling spectroscopy. We show that the tunnelling spectra of the Al(1 1 1) surface and the germanene nanosheets are identical.
View Article and Find Full Text PDFThe highly oriented pyrolytic graphite (HOPG) surface, consisting of a dangling bond-free lattice, is regarded as a potential substrate for van der Waals heteroepitaxy of two-dimensional layered materials. In this work, the growth of silicon and germanium on HOPG is investigated with scanning tunneling microscopy by using typical synthesis conditions for silicene and germanene on metal surfaces. At low coverages, the deposition of Si and Ge gives rise to tiny and sparse clusters that are surrounded by a honeycomb superstructure.
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