Thickness Dependence in Phase Formation and Properties of TaSe Layers Grown on GaP(111).

The effect of growth temperature and subsequent annealing on the epitaxy of both single- and few-layer TaSe on Se-terminated GaP(111) substrates is investigated. The selective growth of the 1T and 1H phases is shown up to 1 ML according to X-ray and ultraviolet photoelectron spectroscopies. The 1H monolayer, favored at low temperatures, exhibits a very homogeneous coverage after annealing, while the 1T ML, grown at high temperatures, is characterized by a better in-plane orientation.