Mixed Dimensional ZnO/WSe Piezo-gated Transistor with Active Millinewton Force Sensing.

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ) on the WSe channel.

Integration of ZnO nanorods with MOS capacitor for self-powered force sensors and nanogenerators.

In this work, we present a novel force-sensing device with zinc oxide nanorods (ZnO NRs) integrated with a metal-oxide-semiconductor (MOS) capacitor and encapsulated with Kapton tape. The details of the fabrication process and working principle of the integrated ZnO NRs-MOS capacitor as a force sensor and nanogenerator have been discussed. The fabricated ZnO-MOS device is tested for both the open-circuit and resistor-connected mode.

Comparison of ZnO nanowires grown on e-beam evaporated Ag and ZnO seed layers.

In this study, ZnO nanowires with diameters ranging from 50 nm to 500 nm have been synthesized hydrothermally on Ag and ZnO seed layers deposited by electron beam evaporation. ZnO nanowires grown on hetero and homo interfaces have been studied by comparing the growth characteristics of (a) ZnO nanowires on the Ag seed layer and (b) ZnO nanowires grown on the ZnO seed layer, respectively. The surface morphology of the as-evaporated seed layers before the nanowire growth has been investigated.