Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices.

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode.

Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications.

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS flakes requiring a forming step to enable RS.

Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches.

Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimensional materials (2DMs). This study presents a detailed atomistic examination of the migration of different metal atoms across the grain boundaries (GBs) of 2DMs, employing density functional theory in conjunction with non-equilibrium Green's function transport simulations. Various types of metallic atoms, such as Au, Cu, Al, Ni, and Ag, are examined, focusing on their migration both in the out-of-plane direction through a MoS layer and along the surface of the MoS layer, pertinent to filament formation in vertical and lateral memristors, respectively.

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors.

Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest in the implementation of memristive architectures. In addition to being functionally similar to synapses, their nanoscale footprint promises to achieve the high density of a biological neural network in the context of neuromorphic computing. However, in order to advance from the current exploratory phase and reach reliable and sound memristive performances, an understanding of the underlying physical mechanisms in TMD memristors seems imperative.

A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications.

Two-dimensional graphene and graphene-based materials are attracting increasing interest in neuromorphic computing applications by the implementation of memristive architectures that enable the closest solid-state equivalent to biological synapses and neurons. However, the state-of-the-art fabrication methodology involves routine use of high-temperature processes and multistepped chemical synthesis, often on a rigid substrate constraining the experimental exploration in the field to high-tech facilities. Here, we demonstrate the use of a one-step process using a commercial laser to fabricate laser-induced graphene (LIG) memristors directly on a flexible polyimide substrate.

Insights into the Mechanical and Electrical Properties of a Metal-Phosphorene Interface: An Ab Initio Study with a Wide Range of Metals.

Finding a metal contact with higher interface adhesion and lower contact resistivity is a major challenge in realizing 2D material-based field-effect transistors. The commonly used metals in the semiconductor industry have different interface chemistry with phosphorene. Although phosphorene FETs have been fabricated with gold, titanium, and palladium contacts, there are other metals with a better interface.