Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications.

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS flakes requiring a forming step to enable RS.